High electron mobility transistor (HEMT) with gate edge groove type source field plate structure

Abstract

The invention discloses a high electron mobility transistor (HEMT) with a gate edge groove type source field plate structure and belongs to the field of semiconductor devices. The HEMT comprises a lining layer, a buffer layer, a barrier layer, a source, a gate, a drain, a passivation layer, the source field plate and a gate drainage region groove, wherein the gate drain region groove is formed along the edge of the gate in the gate drainage region and formed by etching the barrier layer in the width direction of the gate. Compared with the HEMT with the traditional source field plate, the HEMT with the gate edge groove type source field plate structure has the advantages that electric field wires collected at the periphery of one side, which is close to the drain, of the gate are reduced, so that the electric field at one side, which is close to the drain, of the gate can be reduced; and therefore, the breakdown voltage of the HEMT can be obviously increased.

Description

technical field [0001] The present invention relates to a high electron mobility transistor (High Electron Mobility Transistor, HEMT), in particular to a high electron mobility transistor with a gate edge groove type source field plate structure in which grooves are formed on the gate edge of the gate drain region, The high electron mobility transistor can be used as a basic device of a microwave, millimeter wave communication system and a radar system, and belongs to the field of semiconductor devices. Background technique [0002] Among compound semiconductor electronic devices, high electron mobility transistors (HEMTs) are the most important electronic devices used in high-frequency and high-power applications. This electronic device relies on the two-dimensional electron gas (2DEG) with quantum effect in the semiconductor heterojunction to form a conductive channel. The density, mobility and saturation speed of 2DEG determine the current handling capability of the devic...

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Problems solved by technology

The disadvantage of introducing a gate field plate is that the gate-drain feedback capacitance is increased, which reduces the power gain of the device. Conduction, that is, grooves are etched in the barrier layer under the gate, thereby improving the power gain of the device, see [A 149W recessed-gate AlGaN / GaN FP-FET, Microwave Symposium Digest, 2004 IEEE MTT-S International ,vol. 3, pp. 1351-1354, 2004HEMTHEMT]

However, the structure of etching the barrier layer below the gate to form grooves will significantly reduce the current density of the device, thereby affecting the power performance of the device.

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