Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon

Abstract

The invention discloses a process for cleaning a damage layer of the reactive ion etching (RIE) flocking surface of crystalline silicon. The process comprises the following steps of: (1) precleaning the damage layer of the surface, which is etched by RIE, of a silicon wafer by using deionized water; (2) preparing a cleaning solution, wherein the cleaning solution is a mixed solution of HF, HCl and H2O2, and a volume ratio of the HF to the HCl to the H2O2 is (3-15):(3-15):(1-5); and (3) cleaning the damage layer of the silicon wafer for 4 to 15 minutes by using the cleaning solution so as to remove the damage layer. According to the cleaning process, the speed of etching the damage layer is low, and a flock structure on the surface of the silicon wafer is not influenced in the etching process, so the process is suitable for the damage removal process of a refined surface structure which is subjected to the RIE flocking of the crystalline silicon; the process is simple, alkaline washing and secondary acid washing are avoided, the process flow is reduced greatly, raw materials are saved, the production cost is reduced, and the process is suitable for industrial production; and the discharge of effluent is reduced substantially, and the burden of subsequent treatment is relieved.

Description

technical field [0001] The invention relates to a silicon crystal cleaning process, in particular to a cleaning process for a damaged layer on the surface of a crystalline silicon RIE texturing process. Background technique [0002] In order to improve the efficiency of photovoltaic power generation and reduce the cost of photovoltaic power generation, a surface texture process, namely velvet, was introduced. It achieves the purpose of improving the efficiency of solar cells by increasing the absorption of light by the cells, reducing the surface reflectivity, and increasing the short-circuit current of solar cells. People have tried many new texture-making processes, such as mechanical grooving, reactive ion etching, honeycomb texture technology, electrochemical corrosion, etc. At present, reactive ion etching (RIE) is widely used in industrial production. It can form a finer textured surface on the rough textured surface obtained after conventional texturing, greatly redu...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiencies of the present technology, to provide a cleaning process for the damaged layer on the surface of the crystalline silicon RIE texturing, and to solve the problem of excessive etching easily occurring when cleaning the damaged layer of the silicon wafer in the prior art, thereby affecting the silicon Disadvantages of the light trapping effect on the surface of the sheet