Longitudinally-conductive GaN (gallium nitride)-substrate MISFET (metal insulated semiconductor field-effect transistor) device and manufacturing method thereof

Abstract

The invention relates to a longitudinally-conductive GaN (gallium nitride)-substrate MISFET (metal insulated semiconductor field-effect transistor) device which comprises a grid electrode, a source electrode, a drain electrode, an insulation layer, a conductive GaN substrate and an epitaxial layer formed on the conductive GaN substrate. The epitaxial layer sequentially includes a first n-shaped light-doped GaN layer, a secondary growth masking media layer, a non-doped GaN layer and a heterogeneous-media potential barrier layer from bottom to top. A groove channel is formed in the middle of the epitaxial layer, the insulation layer is covered on the surface of the groove channel and the heterogeneous-media potential barrier layer, and the grid electrode is covered on the groove channel on the insulation layer. Source electrode areas are formed at two ends of an etching insulation layer, ohm metals are evaporated in the source electrode areas and form the source electrodes contacting with the heterogeneous-media potential barrier layer, and the drain electrode is disposed on the back of the conductive GaN substrate. In the manufacturing method, the insulated media masking layer is directly used as a current baffle layer, a high-quality low-conduction resistance access area is formed in the grate electrode etching area by the side extension technology, and the longitudinally-conductive GaN MISFET device which is stable is obtained.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a vertically conducting GaN-based MISFET device and a manufacturing method thereof. Background technique [0002] The third-generation wide-bandgap semiconductor materials represented by GaN have excellent material performance characteristics such as wide bandgap, high breakdown electric field strength, high saturation electron drift velocity, high thermal conductivity, and high concentration of two-dimensional electron gas at the heterogeneous interface. Compared with Si materials, GaN is more suitable for making power electronic devices with high power, high capacity and high switching speed. Compared with traditional Si devices, GaN devices can carry higher power density and have higher energy conversion efficiency, which can reduce the volume and weight of the entire system, thereby reducing system cost. [0003] At present, from the perspective of the device structure r...

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Problems solved by technology

[0010] According to the latest research results, the vertical conduction structure MISFET based on AlGaN / GaN heterojunction and insulated gate structure can achieve low on-resistance, high voltage, large conduction current and other characteristics, while the P-type current blocking layer technology has a significant effect on reducing the quality of the upper GaN lattice, which will lead to a decrease in channel mobility and thus affect device performance. There is a depletion effect, which reduces the concentration of two-dimensional electron gas and further affects the conduction performance of the device

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