Manufacture method of metal-multilayer insulator-metal capacitor
A multi-layer insulator and metal capacitor technology, applied in the field of microelectronics, can solve the problems of large leakage current of silicon nitride film capacitors, and achieve the effects of improving electrical uniformity, breakdown voltage and stability
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[0028] The present invention will be further described below in combination with principle diagrams and specific operation examples.
[0029] Such as figure 1 And shown in Fig. 2A-2F, a kind of fabrication method of metal-multilayer insulator-metal capacitor of the present invention specifically comprises the following steps:
[0030] Step S1: providing a substrate 1, and depositing a layer of low dielectric constant (low K value) dielectric layer 2 on the substrate 1;
[0031] Step S2: making an opening 21 on the low dielectric constant dielectric layer 2;
[0032] Step S3: Deposit silicon nitride in the opening 21. In this step, the deposition of silicon nitride is carried out by using a plasma-enhanced chemical vapor deposition method and an oxygen-containing gas treatment method in a cycle, that is, firstly, using plasma Silicon nitride is deposited by volume-enhanced chemical vapor deposition, then treated with oxygen-containing gas, and then silicon nitride is depo...
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