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Preparation method of transition metal doped alpha-Fe2O3 nano rod array

A nanorod array, transition metal technology, applied in photosensitive devices, semiconductor/solid-state device manufacturing, electrolytic capacitors, etc., can solve the problems of low photoelectric conversion efficiency of batteries, short carrier diffusion paths, and low hole movement rates. Achieve the effect of improving the utilization rate of sunlight, improving the Fermi level and the transmission rate of photogenerated electrons, and improving the photoelectric conversion efficiency.

Inactive Publication Date: 2012-07-25
QINGDAO UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, α-Fe 2 o 3 The reason why the cell efficiency as a photoanode is still low is due to the low hole movement rate at room temperature (approximately 0.01 cm 2 ·V -1 ·s -1 ), the resulting carrier diffusion path is short (about 2~4nm), and the lifetime of the carrier is very short (~10 -12 s), so the photoelectric conversion efficiency of the battery is low

Method used

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  • Preparation method of transition metal doped alpha-Fe2O3 nano rod array
  • Preparation method of transition metal doped alpha-Fe2O3 nano rod array
  • Preparation method of transition metal doped alpha-Fe2O3 nano rod array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1: FTO-based α-Fe 2 O 3 Preparation of nanorod photoanode

[0026] (1) Prepare FTO conductive glass substrate: cut FTO into strips, and ultrasonically clean each with acetone, absolute ethanol and deionized water for 10 to 30 minutes, each with ultrasonic power of 200 watts;

[0027] (2) From 0.540~1.622g FeCl 3 .6H 2 O, 5wt% polyvinyl alcohol (PVA) aqueous solution and 0.3wt% HCl (36.5%~38%) solution to prepare 20mL gelatin solution;

[0028] (3) Obtain a yellow-green FeOOH prefabricated film on the FTO conductive glass through the glue spinning technology;

[0029] (4) After sintering at 300~500℃ for 1~5 hours, reddish brown α-Fe is obtained 2 O 3 The buffer layer;

[0030] (5) Prepare reaction solution: 0.540~1.622g FeCl 3 .6H 2 O and 1.70~2.55g NaNO 3 Dissolved in 20mL of HCl solution and ethanol with a volume ratio of 3:3~7;

[0031] (6) Put the FTO with the buffer layer obtained in step (4) into a polytetrafluoroethylene lined autoclave, and transfer the reaction sol...

Embodiment 2

[0034] Example 2: α-Fe 2 O 3 Nanorod photoanode undergoes transition metal Sn through liquid phase chemical reaction 4+ Doping

[0035] (1) 0.01~0.5g SnCl 4 ·5H 2 Dissolve O in 10 mL of ethanol, and prepare 20-30 mL of 1~2mg / mL ethanol solution doped with transition metal ions;

[0036] (2) The step (8) obtained in Example 1 has α-Fe 2 O 3 The substrate of the nanorod array is placed in a polytetrafluoroethylene lined autoclave, and the transition metal ion ethanol solution in step (1) is transferred into it and the autoclave cover is tightened;

[0037] (3) Put the autoclave in step (2) into an electric heating constant temperature blast drying oven at 70-120°C for 4-6 hours;

[0038] (4) The product obtained in step (3) is washed sequentially with deionized water and absolute ethanol, and dried in an oven at 40-80°C for 6-12 hours to obtain α-Fe doped with transition metal ions 2 O 3 Nanorod array.

[0039] The transition metal ion Ti of this embodiment 4+ , Sn 2+ , Mn 2+ , Cu 2+ , Cu...

Embodiment 3

[0040] Example 3: α-Fe with metal Ti as the base 2 O 3 Preparation method of nanorod photoanode

[0041] (1) Preparing the base Ti foil: cutting FTO into strips, polishing, and ultrasonic cleaning with acetone, absolute ethanol and deionized water for 10-30 minutes each, the ultrasonic power is 200 watts;

[0042] (2) From 0.540~1.622g FeCl 3 .6H 2 O, 5wt% polyvinyl alcohol (PVA) aqueous solution and 0.3wt% HCl (36.5%~38%) solution to prepare 20mL gelatin solution;

[0043] (3) Using printing technology repeatedly to obtain FeOOH prefabricated film on Ti foil;

[0044] (4) Sintering at 300~500℃ for 1~5 hours to obtain α-Fe 2 O 3 The buffer layer;

[0045] (5) Prepare reaction solution: 0.540~1.622g FeCl 3 .6H 2 O and 1.70~2.55g NaNO 3 Dissolved in 20mL of HCl solution and ethanol with a volume ratio of 3:3~7;

[0046] (6) Put the Ti foil with buffer layer obtained in step (4) into a polytetrafluoroethylene lined autoclave, and transfer the reaction solution in step (5) into it;

[0047] (...

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Abstract

The invention belongs to the technical field of battery materials, and relates to a preparation method of a transition metal doped alpha-Fe2O3 nano rod array. The preparation method comprises the following steps: carrying out ultrasonic cleaning pretreatment respectively on acetone, absolute ethyl alcohol and deionized water successively for a selected substrate, and mixing FeCl3.6H2O, a polyvinyl alcohol water solution and an HCl (hydrogen chloride) solution, thereby obtaining a gelatin solution; preparing and forming an alpha-Fe2O3 buffer layer by the gelatin solution for the pretreatment substrate by adopting a spin-coating technique; dissolving FeCl3.6H2O and 1NaNo3 in a mixed solution of the HCl solution and alcohol, thereby preparing the reaction liquid; placing the substrate alpha-Fe2O3 buffer layer into a high-pressure kettle of a teflon inner lining, also pouring the reaction liquid into the high-pressure kettle, tightening a cap of the high-pressure kettle, and placing into an electric heating constant-temperature air blast drying box for heat preservation and drying, thereby obtaining the reaction product; and preparing an alpha-Fe2O3 nano rod array by a step-by-step temperature rising mode for the reaction product. The preparation process is simple, the repeatability is good, the cost is low, the application range is wide, and the application effects are good.

Description

Technical field: [0001] The invention belongs to the technical field of battery materials, and relates to a transition metal doped α-Fe 2 O 3 Preparation method of nanorod array. Background technique: [0002] With the increasingly serious global energy crisis, people urgently need to develop new energy materials and use new energy. Solar energy, as an inexhaustible, clean and safe natural energy source, has received increasing attention from countries all over the world. Compared with traditional monocrystalline silicon solar cells, dye-sensitized solar cells have the advantages of low cost, simple process and stable performance, and have become a hot spot for competitive research at home and abroad. In order to improve the photoelectric conversion efficiency of the battery, researchers continue to improve the sensitizer, electrolyte and semiconductor photoanode materials of the battery. Among them, selecting the appropriate semiconductor photoanode material is an important way ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/20H01M14/00H01L51/48
CPCY02E10/549
Inventor 董立峰刘春廷
Owner QINGDAO UNIV OF SCI & TECH
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