Method for increasing writing speed of floating body cell

Abstract

The method for improving the writing speed of a floating body effect memory unit of the present invention includes the following steps: using a side wall deposition process to form a side wall film on the floating body effect memory unit; using an etching process to etch the floating body effect memory after side wall deposition Unit, the etching process has a dense / isolation effect; source and drain heavy doping and annealing processes are used. The method for improving the writing speed of floating body effect memory cells of the present invention utilizes existing processes to, on the one hand, increase the longitudinal electric field in the drain end channel and increase the substrate current, and on the other hand, reduce the leakage of accumulated carriers from the source end. speed, thus improving the writing speed of floating body effect memory cells.

Description

technical field [0001] The invention relates to a method for increasing the writing speed of a memory unit, in particular to a method for improving the writing speed of a floating body effect memory unit. Background technique [0002] The development of embedded dynamic storage technology has made large-capacity dynamic random access memory (DRAM) very common in current system-on-chip (SOC). Large-capacity embedded dynamic memory (eDRAM) brings various benefits to SoCs such as improved bandwidth and reduced power consumption that can only be achieved by using embedded technology. In addition to transistors, each memory cell of traditional embedded dynamic memory (eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the memory cell much larger than its width, which makes the manufacturing process difficult. Its manufacturing process is very incompatible with CMOS VLSI process, which limits its application in embedded syste...

AI Technical Summary

Problems solved by technology

In addition to transistors, each storage unit of traditional embedded dynamic memory (eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the storage unit much larger than its width, which makes the manufacturing process difficult

Its manufacturing process is very incompatible with CMOS VLSI process, which limits its application in embedded system chip (SOC)

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