Method for increasing writing speed of floating body cell

Abstract

The invention provides a method for increasing the writing speed of a floating body cell. The method comprises the following steps of: forming a side wall thin film by performing a side wall deposition process on the floating body cell; etching the floating body cell subjected to side wall deposition by adopting an etching process, wherein the etching process has a dense / isolation effect; and adopting a source / drain heavy doping and annealing process. According to the method for increasing the writing speed of the floating body cell, by using the conventional process, a longitudinal electric field in a channel at a drain terminal is enhanced, and the substrate current is increased; and furthermore, the leakage speed of accumulated current carriers from a source terminal is reduced, so that the writing speed of the floating body cell is increased.

Description

technical field [0001] The invention relates to a method for increasing the writing speed of a memory unit, in particular to a method for improving the writing speed of a floating body effect memory unit. Background technique [0002] The development of embedded dynamic storage technology has made large-capacity dynamic random access memory (DRAM) very common in current system-on-chip (SOC). Large-capacity embedded dynamic memory (eDRAM) brings various benefits to SoCs such as improved bandwidth and reduced power consumption that can only be achieved by using embedded technology. In addition to transistors, each memory cell of traditional embedded dynamic memory (eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the memory cell much larger than its width, which makes the manufacturing process difficult. Its manufacturing process is very incompatible with CMOS VLSI process, which limits its application in embedded syste...

AI Technical Summary

Problems solved by technology

In addition to transistors, each storage unit of traditional embedded dynamic memory (eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the storage unit much larger than its width, which makes the manufacturing process difficult

Its manufacturing process is very incompatible with CMOS VLSI process, which limits its application in embedded system chip (SOC)

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