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Preparation method of titanium dioxide/titanium nitride composite film with adjustable band gaps

A titanium dioxide and composite thin film technology is applied in the field of band gap adjustment of titanium dioxide photocatalysts, which can solve the problems of narrow adjustment range, limited utilization of sunlight, low controllability, etc., and achieves improved utilization, good application prospects, and controllability. Good results

Inactive Publication Date: 2012-07-04
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Titanium dioxide has a large band gap: the anatase phase is 3.2eV, and the rutile phase is 3.0eV, which is equivalent to only using ultraviolet light below the wavelength of 388nm and 414nm, which accounts for less than 10% of sunlight, which is seriously limited. The utilization rate of sunlight, how to adjust the bandgap width of titanium dioxide, and improve the spectral response are the central issues in the research of titanium dioxide semiconductor photocatalysis technology, and also the key issues that must be solved in the process of practical application of titanium dioxide.
[0004] Using metal cations, non-metal anions doping, anion-cation co-doping and multi-layer composites can adjust the bandgap of titanium dioxide thin films, but there is a problem of narrow adjustment range and low controllability.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) ultrasonically clean the silicon substrate one by one with acetone, alcohol, and deionized water and dry it;

[0029] (2) fixing the pretreated substrate on the sample stage of magnetron sputtering;

[0030] (3) Using titanium nitride as the target material, the chamber of the magnetron sputtering coating machine is pumped to 2×10 -4 Pa high vacuum;

[0031] (4) feed argon and nitrogen, keep the working pressure 1.0Pa, wherein the volume fraction of nitrogen is 10%;

[0032] (5) Adjust the angle between the target and the sample stage so that they are facing each other, the distance between the target and the sample stage is kept at 10cm, and the sample stage is rotated at a rate of 0.2rpm. The temperature of the sample stage is kept at 333K. An 800nm ​​thick titanium nitride film is grown on the substrate;

[0033] (6) The prepared titanium nitride film was annealed at 623K in air atmosphere for 60min, then removed from the annealing furnace and lowered to room ...

Embodiment 2

[0035] (1) ultrasonically clean the silicon substrate one by one with acetone, alcohol, and deionized water and dry it;

[0036] (2) fixing the pretreated substrate on the sample stage of magnetron sputtering;

[0037] (3) Using titanium nitride as the target material, the chamber of the magnetron sputtering coating machine is pumped to 2×10 -4 Pa high vacuum;

[0038] (4) feed argon and nitrogen, keep the working pressure 1.0Pa, wherein the volume fraction of nitrogen is 10%;

[0039] (5) Adjust the angle between the target and the sample stage so that they are facing each other, the distance between the target and the sample stage is kept at 10cm, and the sample stage is rotated at a rate of 0.2rpm. The temperature of the sample stage is kept at 333K. An 800nm ​​thick titanium nitride film is grown on the substrate;

[0040] (6) The prepared titanium nitride film was annealed at 623K for 45 minutes in an air atmosphere to obtain a composite film of titanium nitride and ti...

Embodiment 3

[0042] (1) ultrasonically clean the silicon substrate one by one with acetone, alcohol, and deionized water and dry it;

[0043] (2) fixing the pretreated substrate on the sample stage of magnetron sputtering;

[0044] (3) Using titanium nitride as the target material, the chamber of the magnetron sputtering coating machine is pumped to 2×10 -4 Pa high vacuum;

[0045] (4) feed argon and nitrogen, keep the working pressure 1.0Pa, wherein the volume fraction of nitrogen is 10%;

[0046] (5) Adjust the angle between the target and the sample stage so that they are facing each other, the distance between the target and the sample stage is kept at 10cm, and the sample stage is rotated at a rate of 0.2rpm. The temperature of the sample stage is kept at 333K. An 800nm ​​thick titanium nitride film is grown on the substrate;

[0047] (6) The prepared titanium nitride film was annealed at a temperature of 623K for 15 minutes under air condition to obtain a composite film of titaniu...

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Abstract

The invention discloses a preparation method of a titanium dioxide / titanium nitride composite film with adjustable band gaps, belonging to the field of semiconductor energy-band engineering. According to the preparation method, a titanium nitride film is deposited on a substrate by adopting a radio-frequency magnetron sputtering method, and composite films with different optical band gaps can be obtained by carrying out annealing treatment on the film at different temperatures and time in air. The composite film shows excellent band-gap-controlled adjustment characteristics in a treatment process at specific temperature and time for annealing; and the preparation method has the advantages of simplicity, fastness, low cost, stronger controllability and excellent application prospect in surface self-cleaning materials and the energy source and environment field of the preparation of hydrogen by catalytically decomposing water and the degradation of harmful organic substances under the conditions of visible light.

Description

technical field [0001] The invention belongs to the technical field of semiconductor energy band engineering, in particular to a method for adjusting the band gap of titanium dioxide photocatalyst. Background technique [0002] Energy and environmental issues are two major problems that plague human development and need to be solved urgently. As a semiconductor photocatalyst, titanium dioxide has the advantages of non-toxicity, low cost, high efficiency, low selectivity, and no secondary pollution. [0003] Titanium dioxide has a large band gap: the anatase phase is 3.2eV, and the rutile phase is 3.0eV, which is equivalent to only using ultraviolet light below the wavelength of 388nm and 414nm, which accounts for less than 10% of sunlight, which is seriously limited. The utilization rate of sunlight, how to adjust the bandgap width of titanium dioxide, and improve the spectral response are the central issues in the research of titanium dioxide semiconductor photocatalysis t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/58
Inventor 张政军谢拯
Owner TSINGHUA UNIV
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