Selective area hetero-epitaxial substrate structure, preparation thereof and epitaxial layer growing method

Abstract

The invention discloses a selective area hetero-epitaxial substrate structure, a preparation thereof and an epitaxial layer growing method, which belong to the field of photoelectronic technique. The substrate structure comprises a substrate, wherein a bottom mask layer and a top mask layer are sequentially arranged on the substrate, the ground floor mask layer is provided with bar-type windows which are distributed in a periodical mode, the top floor mask layer is provided with cross type windows which are distributed in a periodical mode, and an I-shaped top floor mask area is arranged between the cross type windows. Two ends of the I-shaped top floor mask area at the top are connected with a bar-type mask area of the ground floor mask layer through a fragmented dielectric layer, and the cross type windows at the top and the bar-type windows on the ground floor are staggered. The invention further provides the preparation method of the substrate structure and the epitaxial layer growing method based on the substrate structure. Compared with the prior art, the selective area hetero-epitaxial substrate structure provides a one-step method hetero-epitaxial substrate structure, simplifies growing processes, improves effective width of a dislocation-free epitaxial film simultaneously, and has using value.

Description

technical field [0001] The invention relates to a novel heterogeneous epitaxial growth substrate method, which can be directly applied to grow materials such as high-quality Group III nitride semiconductors. Background technique [0002] Materials are the cornerstone of scientific and technological development. Usually, heteroepitaxial growth has become the basic method widely used in material growth due to the scarcity and difficulty in obtaining matching substrates. Currently, the rapidly developing group III nitride semiconductor materials are mainly epitaxially grown on substrates such as sapphire. The so-called Group III nitride materials, including GaN, AlN, InN and their ternary and quaternary alloys, are all direct bandgap materials, with a wide bandgap range (0.75eV~6.2eV), high breakdown electric field, thermal High conductivity, high electron saturation rate, and chemical corrosion resistance, these excellent optical and electrical properties and excellent mater...

AI Technical Summary

Problems solved by technology

Two-step suspended epitaxy technology, the quality of GaN growth in the trench is improved compared with LEO technology, but the central area of ​​each trench is a defect area formed by the connection of adjacent growth fronts

However, the secondary or multiple selected area epitaxial growth based on this has many and complicated processes and high cost, which is not conducive to large-scale production.

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