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Production process of aluminum pad based on polyimide matrix

A technology of polyimide substrate and polyimide layer, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc. Effects of damage, reduction of the possibility of collapse of narrow aluminum wires

Active Publication Date: 2012-04-18
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The present invention provides an aluminum pad manufacturing process based on a polyimide substrate, using a dielectric hard mask method to manufacture an aluminum pad on a polyimide (PI) substrate, avoiding the ashing step after the aluminum pad is etched, So as to solve the problem of damage to the polyimide film during the ashing process using the pure photoresist process

Method used

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  • Production process of aluminum pad based on polyimide matrix
  • Production process of aluminum pad based on polyimide matrix
  • Production process of aluminum pad based on polyimide matrix

Examples

Experimental program
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Effect test

Embodiment 1

[0028] see figure 2 , the first polyimide layer 5 is covered on the semiconductor device wafer 1, and the polyimide adopts polyaddition polyimide. The first polyimide layer is etched to form a first opening 511 , and the first polyimide layer 5 is divided into left and right first polyimide blocks 501 , 502 . In the first opening 511, the aluminum pad 2 used as the signal connection terminal of the semiconductor device is exposed therein.

[0029] Deposit a layer of aluminum film on the first polyimide layer 501, 502, part of the aluminum film is deposited in the first opening 511 and cover the aluminum pad 2 at the same time, and the aluminum pad 2 and the aluminum film layer 4 are connected into one piece , the obtained wafer structure is as image 3 shown.

[0030] see Figure 4 , on the aluminum film layer 4, a dielectric hard mask layer 3 is deposited by low pressure chemical vapor deposition. The dielectric hard mask layer 3 consists of SiO 2 and SiN hybrid materi...

Embodiment 2

[0036] see figure 2 , a large number of semiconductor devices are arranged on the wafer 1. First, a first polyimide layer 5 is covered on the wafer 1. The polyimide is a mixture of polyaddition polyimide and polycondensation polyimide. . The first polyimide layer is etched to form a first opening 511 , and the first polyimide layer 5 is divided into first polyimide blocks 501 , 502 . In the first opening 511, the aluminum pad 2 used as the signal connection terminal of the semiconductor device is exposed therein.

[0037] Deposit a layer of aluminum film on the first polyimide layer 501, 502, part of the aluminum film is deposited in the first opening 511 and cover the aluminum pad 2 at the same time, and the aluminum pad 2 and the aluminum film layer 4 are connected into one piece , the obtained wafer structure is as image 3 shown.

[0038] see Figure 4 , on the aluminum film layer 4, a dielectric hard mask layer 3 is deposited by plasma-enhanced chemical vapor deposi...

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Abstract

The invention provides a production process of an aluminum pad based on a polyimide matrix. The production process comprises the following steps of: depositing a polyimide layer on a semiconductor device and photoetching the polyimide layer to form a trench pattern; sequentially depositing an aluminum film layer and a dielectric hard mask layer on the semiconductor device, spin coating photoresist and photoetching the photoresist to form a trench pattern; carrying out dry-method etching on the dielectric hard mask layer and removing the photoresist by ashing; carrying out dry-method etching on the aluminum film; and spin coating the polyimide layer, photoetching and opening the polyimide layer to form an aluminum pad pattern and then removing the dielectric hard mask layer on the aluminum pad by dry-method etching. In the production of the aluminum pad, the ashing step after the aluminum film is subjected to photoetching is omitted, and thus the damage to the polyimide matrix is avoided and the possibility of causing the collapse of a narrow aluminum line is reduced. The production process is relatively simple and the produced aluminum pad can meet the demand on the layout change of the aluminum pad.

Description

technical field [0001] The invention relates to a manufacturing process of an aluminum pad, in particular to a process for manufacturing an aluminum pad based on a polyimide matrix on a wafer. Background technique [0002] For the manufacturing process of using polyimide (Polyimide, PI) as a protective film on the surface of the wafer, it often happens that the layout of the aluminum pad needs to be changed due to the change of the packaging process. Commonly used treatment methods, such as directly pulling out the polyimide with acid or removing the original aluminum pad. [0003] After the aluminum film is etched in the traditional pure photoresist process, there will be photoresist residues, and an ashing step is required to remove the photoresist. Under the aluminum film is a polyimide layer. Polyimide is an organic polymer. The ashing process will cause damage to the polyimide layer, which will cause the collapse of the narrow aluminum connection, resulting in the enti...

Claims

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Application Information

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IPC IPC(8): H01L21/60
CPCH01L24/03H01L24/05H01L2224/02166
Inventor 谢欣云黄晓橹陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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