Preparation method for ohmic contact electrode based on diamond film field effect transistor

A technology of ohmic contact electrodes and field effect transistors, which is applied in the field of diamond film field effect transistor device manufacturing technology, can solve problems such as poor thermal stability, and achieve the effect of improving thermal stability

Inactive Publication Date: 2013-04-03
SHANGHAI UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The main feature of the present invention is that platinum is used as the intermediate layer of gold and titanium, which acts as a barrier layer and can block the interdiffusion between titanium and gold, and solves the problem of poor thermal stability in the titanium-gold double-layer metal system. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for ohmic contact electrode based on diamond film field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0024] The specific preparation process and steps in this embodiment are as follows:

[0025] 1. Preparation of hydrogen-terminated diamond films

[0026] A diamond film was deposited on a (100) silicon wafer substrate by using hot wire assisted chemical vapor deposition (HFCVD) with acetone and hydrogen as reactants. The reaction pressure in the nucleation period is 1KPa. Acetone: hydrogen = 40: 130 (volume flow ratio), the substrate temperature is 600°C, and the reaction time is 0.5h. The reaction pressure during the growth period is 5KPa. Acetone: hydrogen = 40: 160 (volume flow ratio), the substrate temperature is 650°C, and the reaction time is 12h. Hydrogen-terminated diamond films were obtained by a hydrogen microwave plasma sputtering process. In the MPCVD system, the vacuum is pumped to 5-7Pa, and then hydrogen gas is introduced, the flow rate of hydrogen gas is 100 standard ml / min, the air pressure is adjusted to 2-3kPa, the microwave power is 2600W, and the time...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation method for ohmic contact electrode based on diamond film field effect transistor, which belongs to the technical field of manufacture technology of diamond film field effect transistor device. The preparation method mainly comprises the following steps of: using magnetron sputtering and ion sputtering methods to deposit on a diamond film to prepare a Ti-Pt-Au three-layer metal system, and annealing in nitrogen atmosphere to form the ohmic contact electrode. The three-layer Ti-Pt-Au ohmic electrode has higher IV performance and lower film leakage current,and the resistivity of the electrode is remarkably improved and the performance of the device is improved.

Description

technical field [0001] The invention relates to an optimized manufacturing method based on a diamond thin film field effect transistor ohmic contact electrode, and belongs to the technical field of diamond film field effect transistor device manufacturing technology. Background technique [0002] The hydrogen-terminated diamond film has a p-type surface conductive layer, which is very suitable as a conductive channel layer for field effect devices. With the development of chemical vapor deposition (CVD) diamond film growth technology, the research on diamond devices has achieved preliminary results, such as the development of photodetectors, light-emitting diodes, nuclear radiation detectors, thermistors and power field effects with diamond films. Transistors, etc. Diamond devices are high-temperature, high-frequency and high-power semiconductor devices. Finding ohmic contact electrode materials and preparing high-stable and low-resistance ohmic contacts have become one of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/336
Inventor 王林军庄晓凤曾庆锴潘潇雨黄健唐可张继军夏义本
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap