Electromigration test structure of silicon through hole metal interconnection wire

Abstract

The invention discloses an electromigration test structure of a silicon through hole metal interconnection wire, which comprises a silicon wafer provided with a plurality of silicon through hole units; the silicon through hole units comprise three silicon through holes; the first to third silicon through holes are connected through a silicon wafer back metal layer, and the second silicon through hole is connected with the first silicon through hole of the subsequent adjacent silicon through hole unit through a silicon wafer front metal layer; and a probe head of four probes is placed at the front end opening of the third silicon through hole, while the other probe head is placed on the position connected with the first silicon through hole through the front metal layer on the silicon wafer. The test structure can make a test on electromigration performances of various silicon through hole metal interconnection wires, and can cut off some samples connected in series in the test processfor section analysis without influence of continuous test of the rest samples, so that the test structure has the characteristics of low test cost, convenient operation and high test efficiency.

Description

technical field [0001] The invention relates to the field of electronic high-density three-dimensional packaging, in particular to an electromigration reliability test structure in a through-silicon via metal interconnection mode. technical background [0002] Through-Silicon Via (TSV) technology is a vertical interconnection technology in a chip, and its electrical signal passes through the through hole on the silicon chip. Compared with the traditional planar metal wire interconnection technology, TSV technology can significantly It can greatly increase the density of the package, which has the advantages of saving space, reducing signal delay and improving chip performance. [0003] Electromigration is a very important cause of failure of interconnect lines in microelectronic devices. Electromigration can cause opens and shorts in interconnect lines. There have been many studies on the electromigration properties of conventional interconnect metal lines. However, there ...

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Problems solved by technology

However, there are very few electromigration studies on TSV interconnection technology. In view of the different environment between electromigration of TSV interconnection technology and traditional interconnection metal wires, for example, ordinary interconnection metal wires are mostly wrapped by packaging plastics, while TSV The metal interconnection in the hole of the through-silicon via is wrapped by the silicon substrate, so it is necessary to test the electromigration of the TSV interconnection technology; because the through-hole is small and the four-probe method cannot directly point on both sides of the through-hole like the traditional structure. Therefore, there is an urgent need for a convenient electromigration experimental structure specially designed for TSV interconnection technology to conduct electromigration tests on various types of TSVs, obtain the electromigration performance of TSVs, and improve product reliability.

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