Multi-walled carbon nanotube injected with carboxyl ions, preparation method and application thereof
A technology of multi-walled carbon nanotubes and carboxyl ions, applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, to improve anticoagulant performance, reduce platelet adhesion rate, and good blood compatibility Effect
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Embodiment 1
[0050] Preparation of Carboxyl Ion Implanted Multi-walled Carbon Nanotubes:
[0051] Use the BNU-400keV ion implanter to perform carboxyl ion implantation on the pre-sprayed multi-walled carbon nanotube substrate (silicon dioxide wafer); in this process, formic acid is used as the ion source, and the formic acid is first evaporated at high temperature and accelerated electron bombardment To ionize it, the electron beam current density is controlled at 3μA / cm 2 below; the air pressure in the chamber during injection is 1 10 -3 Pa, the temperature is room temperature, and the ion energy is 40keV; the implantation density of carboxyl ions is 5×10 13 piece / cm 2 ; The percentage of oxygen atoms is 7.53%.
Embodiment 2
[0053] Preparation of Carboxyl Ion Implanted Multi-walled Carbon Nanotubes:
[0054] Use the BNU-400keV ion implanter to perform carboxyl ion implantation on the pre-sprayed multi-walled carbon nanotube substrate (silicon dioxide wafer); in this process, formic acid is used as the ion source, and the formic acid is first evaporated at high temperature and accelerated electron bombardment To ionize it, the electron beam current density is controlled at 3μA / cm 2 below; the air pressure in the chamber during injection is 1 10 -3 Pa, the temperature is room temperature, and the ion energy is 40keV; the implantation density of carboxyl ions is 1×10 14 piece / cm 2 . The percentage of oxygen atoms is 8.5%.
Embodiment 3
[0056] Preparation of Carboxyl Ion Implanted Multi-walled Carbon Nanotubes:
[0057] Use the BNU-400keV ion implanter to perform carboxyl ion implantation on the pre-sprayed multi-walled carbon nanotube substrate (silicon dioxide wafer); in this process, formic acid is used as the ion source, and the formic acid is first evaporated at high temperature and accelerated electron bombardment To ionize it, the electron beam current density is controlled at 3μA / cm 2 below; the air pressure in the chamber during injection is 1 10 -3 Pa, the temperature is room temperature, and the ion energy is 40keV; the implantation density of carboxyl ions is 5×10 14 piece / cm 2 ; The percentage of oxygen atoms is 12.86%.
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