Enhanced high electron mobility transistor and manufacturing method thereof

Abstract

The invention discloses an enhanced high electron mobility transistor and a manufacturing method thereof. The high electron mobility transistor comprises a buffer layer, a source electrode, a drain electrode, multiple P-N junctions and a grid electrode, wherein the buffer layer is epitaxial on a substrate; the source electrode and the drain electrode are formed on the buffer layer; the P-N junctions formed by multilayer stacks are formed on the buffer layer and between the source electrode and the drain electrode; the grid electrode is formed on the stacks of the P-N junctions; and each P-N junction is composed of a P-type semiconductor and an N-type semiconductor. The enhanced high electron mobility transistor and the manufacturing method thereof can improve the problem of poor efficiency of a depressed gate structure or an enhanced gallium nitride transistor manufactured by a carbon tetrafluoride plasma processing mode in the prior art, and greatly improve the threshold voltage of the enhanced high electron mobility transistor.

Description

technical field [0001] The invention relates to an enhanced high-electron-mobility transistor (High-Electron-Mobility Transistor, HEMT) technology, in particular to an enhanced high-electron-mobility transistor with P-N junction multilayer stacking to increase threshold voltage and a manufacturing method thereof. Background technique [0002] Gallium nitride high electron mobility transistors have been used in high-power components in recent years due to their high output power, high breakdown voltage, and high temperature resistance. However, because the GaN / AlGaN in its structure has a large amount of polarized charges and forms a two-dimensional electron gas (Two-Dimensional Electron Gas, 2DEG), this type of transistor usually operates in a depletion mode (Depletion Mode) , and it belongs to a normally-on (Normally On) transistor, and its threshold voltage (Threshold Voltage, VT) is a negative value. Therefore, even when the gate bias voltage of this type of transistor i...

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Problems solved by technology

[0004] An object of the present invention is to provide an enhanced high electron mobility transistor and its manufacturing method, in order to improve the efficiency of the enhanced gallium nitride transistor produced by the deep recessed gate structure or the carbon tetrafluoride plasma treatment method in the prior art. good question

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