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Zinc oxide nanowire array photocatalytic material based on cuprous oxide quantum dot modification and its preparation method and application

A zinc oxide nanowire, photocatalytic material technology, applied in metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, botanical equipment and methods, etc., to achieve good killing effect, firm connection, high effect of reactivity

Inactive Publication Date: 2011-12-07
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiencies of the existing zinc oxide / cuprous oxide photocatalysts, and provide a low-cost and environmentally friendly zinc oxide nanowire array photocatalytic material based on cuprous oxide quantum dot modification

Method used

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  • Zinc oxide nanowire array photocatalytic material based on cuprous oxide quantum dot modification and its preparation method and application
  • Zinc oxide nanowire array photocatalytic material based on cuprous oxide quantum dot modification and its preparation method and application
  • Zinc oxide nanowire array photocatalytic material based on cuprous oxide quantum dot modification and its preparation method and application

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Embodiment 1

[0035] 1) Preparation of zinc oxide nanowire array: prepare a zinc acetate aqueous solution with a concentration of 0.05mM as electrolyte, platinum electrode as counter electrode, saturated calomel electrode as reference electrode, and ITO conductive glass as working electrode; At 75°C, oxygen was blown into the zinc acetate aqueous solution, and a voltage of -0.8V was applied to the working electrode for 1 hour to obtain an array of zinc oxide nanowires grown on ITO conductive glass; the morphology of the sample Perform SEM and TEM characterization respectively, and the results obtained are as follows figure 2 , image 3 Shown.

[0036] 2) Deposit cuprous oxide quantum dots on the surface of zinc oxide nanowires: prepare a 5mM copper nitrate dimethyl sulfoxide solution as electrolyte, platinum electrode as counter electrode, saturated calomel electrode as reference electrode, Take the ITO conductive glass grown with zinc oxide nanowire arrays obtained in step 1) as the working ...

Embodiment 2

[0042] 1) Preparation of zinc oxide nanowire array: prepare 0.5mM zinc acetate aqueous solution as electrolyte, platinum electrode as counter electrode, saturated calomel electrode as reference electrode, and FTO conductive glass as working electrode; At 85° C., oxygen gas was blown into the zinc acetate aqueous solution, and a voltage of -1V was applied to the working electrode for 2 hours to obtain an array of zinc oxide nanowires grown on the FTO conductive glass.

[0043] 2) Deposit cuprous oxide quantum dots on the surface of zinc oxide nanowires: prepare a 10 mM copper nitrate dimethyl sulfoxide solution as an electrolyte, a platinum electrode as a counter electrode, and a saturated calomel electrode as a reference electrode. Take the FTO conductive glass grown with zinc oxide nanowire arrays obtained in step 1) as the working electrode; at a temperature of 60°C, electrochemical cyclic voltammetry is used to apply a voltage range of -0.2V to -0.6V ( Compared with the cyclic...

Embodiment 3

[0049] 1) Preparation of zinc oxide nanowire array: prepare 1 mM zinc acetate aqueous solution as electrolyte, platinum electrode as counter electrode, saturated calomel electrode as reference electrode, and ITO conductive glass as working electrode; At 95° C., oxygen was blown into the zinc acetate aqueous solution, and a voltage of -1.1V was applied to the working electrode for 3 hours to obtain an array of zinc oxide nanowires grown on the ITO conductive glass.

[0050] 2) Depositing cuprous oxide quantum dots on the surface of zinc oxide nanowires: prepare a 15 mM copper nitrate dimethyl sulfoxide solution as electrolyte, platinum electrode as counter electrode, and saturated calomel electrode as reference electrode. Take the ITO conductive glass grown with zinc oxide nanowire arrays obtained in step 1) as the working electrode; at a temperature of 75°C, electrochemical cyclic voltammetry is used to apply a voltage range of -0.2V to -0.6V ( Compared with the cycle scanning vo...

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Abstract

The invention belongs to the technical field of nanometer material application, and specifically relates to a photo-catalytic material based on a zinc oxide nanometer linear array modified with cuprous oxide quantum dots, and a preparation method and application thereof. According to the invention, the zinc oxide nanometer linear array which firmly grows on a conductive substrate is used as a working electrode, a platinum electrode is used as a counter electrode, a saturated calomel electrode is used as a reference electrode, and the dimethyl sulfoxide solution of copper nitrate is used as electrolyte; and an electrochemical cyclic voltammetry method is performed to obtain the photo-catalytic material based on the zinc oxide nanometer linear array modified with the cuprous oxide quantum dots. The photo-catalytic material of the invention is placed in the water solution to be treated; zinc oxide and cuprous copper produce photoelectrons and holes respectively under the irradiation of sunlight; and the photoelectrons and holes can react with dissolved oxygen and hydroxyl ions in water respectively to generate derivatives with strong oxidizability for killing bacteria.

Description

Technical field [0001] The invention belongs to the technical field of nano material application, and particularly relates to a zinc oxide nanowire array photocatalytic material modified based on cuprous oxide quantum dots, and a preparation method and application thereof. Background technique [0002] In recent years, zinc oxide nanomaterials have attracted widespread attention in the application of photocatalytic water purification (Yang, An et al. 2004; Peng, Wang et al. 2006; Akhavan, Mehrabian et al. 2009; Mosnier, O'Haire et al.2009). However, as a wide band gap semiconductor material, the absorption of sunlight by zinc oxide is limited to the ultraviolet part of the solar spectrum, which greatly limits its utilization efficiency of sunlight. At the same time, the exciton recombination effect of zinc oxide is also an important factor that reduces its photocatalytic efficiency. In order to solve these problems, zinc oxide often forms a heterostructure with other semiconduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/72A01N59/20A01P1/00C02F1/30
Inventor 佘广为王耀师文生
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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