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Composition for producing metal film, method for producing metal film, and method for producing metal powder

A manufacturing method and metal film technology, applied in the direction of metal/alloy conductors, metal processing equipment, cable/conductor manufacturing, etc.

Inactive Publication Date: 2011-09-21
TOSOH CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires a high temperature of more than 200°C and a reaction time of more than 1 hour

Method used

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  • Composition for producing metal film, method for producing metal film, and method for producing metal powder
  • Composition for producing metal film, method for producing metal film, and method for producing metal powder
  • Composition for producing metal film, method for producing metal film, and method for producing metal powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0099] 0.06 g of triruthenium dodecacarbonyl was dissolved in a liquid mixed with 12.5 mL of 1,3-butanediol and 12.5 g of 1,4-cyclohexanediol to prepare a solution. After mixing 0.1 g of this solution with 0.04 g of cuprous nitride (I) (fine particles obtained by a spray pyrolysis method: average particle diameter: 30 nm), printing was performed on a polyimide substrate by a screen printing method. Then, in a nitrogen atmosphere, the temperature was raised at a rate of 100° C. / minute, and heated at 200° C. for 1 hour. The obtained film had a film thickness of 12 μm and a resistivity of 1700 μΩcm.

Embodiment 2

[0101] Except for heating at 160° C., the same operation as in Example 1 was carried out, and the obtained film had a film thickness of 13 μm and a resistivity of 3800 μΩcm.

Embodiment 3

[0103] Except mixing 0.018 g of epoxy resin (manufactured by Toagosei Co., Ltd., grade: AS-60) in the solution of Example 1, the same operation as Example 1 was carried out. The film thickness of the obtained film was 10 μm, and the resistance The ratio is 350 μΩcm. The X-ray diffraction pattern of the obtained film was measured, and as a result, it was confirmed that figure 1 Diffraction peaks from metallic copper are shown.

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Abstract

Provided are a composition with which a metal film can be produced directly from a high-atomic-valence metal compound, a method for producing a metal film, and a method for producing a metal powder. The composition for producing a metal film of copper, silver, or indium comprises a high-atomic-valence compound of copper, silver or indium; a linear, branched or cyclic C1-18 alcohol; and a group VIII metal catalyst. The copper, silver, or indium metal film is produced by subjecting a film formed from the same composition to heating and reduction. The copper, silver, or indium metal film can also similarly be produced by substituting the high-atomic-valence compound of copper, silver, or indium with copper, silver, or indium metal particles wherein the surface layer is formed from the high-atomic-valence compound of copper, silver, or indium.

Description

technical field [0001] The present invention relates to a composition for producing a metal film of copper, silver or indium, a method for producing the metal film, and a method for producing a metal powder. Background technique [0002] With the development of large-scale flat panel displays (FPDs), flexible displays represented by electronic paper have attracted much attention. In such devices, various metal films are used for wiring and electrodes. Vacuum film-forming methods such as sputtering and vacuum deposition are widely used as methods for forming the metal film, and various circuit patterns and electrodes are formed by photolithography using a photomask. [0003] In recent years, film formation using screen printing and an inkjet method has been widely studied as a wiring / electrode film forming method that can reduce the number of steps required for pattern formation, and is suitable for mass production and cost reduction. In this method, conductive particles ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00B22F9/00B22F9/20B22F9/24C23C18/08C23C18/16
CPCB22F9/24C23C18/08B22F2998/00H01B1/02H01B1/026B22F1/054B22F9/00H01B13/00
Inventor 山川哲大岛宪昭川畑贵裕木下智之稲生俊雄
Owner TOSOH CORP
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