Piezoelectric film, piezoelectric device, liquid ejecting device, and method for producing piezoelectric film

一种压电薄膜、液体的技术，应用在制备所述压电薄膜领域，能够解决裂纹、PZT薄膜裂纹、耐久性下降等问题，达到防止形成缺陷、改善驱动耐久性、驱动耐久性改善的效果

Active Publication Date: 2017-03-01
FUJIFILM CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using the sol-gel method to prepare PZT films with a thickness of at least 2 μm may cause cracks in the PZT films due to the thermal stress generated by repeated coating and sintering steps
Therefore, it is difficult to prepare PZT thin films at least 2 μm thick using the sol-gel method
In addition, when the PZT thin film is prepared using the sol-gel method, horizontal stripes are caused every time the crystallization is performed by sintering, and when the piezoelectric crystal repeatedly performs functions related to the piezoelectric effect, the stripe defects cause cracks, resulting in durable sex decline

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Piezoelectric film, piezoelectric device, liquid ejecting device, and method for producing piezoelectric film
  • Piezoelectric film, piezoelectric device, liquid ejecting device, and method for producing piezoelectric film
  • Piezoelectric film, piezoelectric device, liquid ejecting device, and method for producing piezoelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0131] Using a sputtering method at a substrate temperature of 350° C., a Ti film with a thickness of 30 nm and an Ir film with a thickness of 150 nm were sequentially formed on an SOI substrate to obtain a lower electrode. A Nb-doped PZT piezoelectric thin film with a thickness of 4 μm was formed on this lower electrode. Formation of this thin film was performed under the following conditions.

[0132] >

[0133] Film forming device: RF sputtering device

[0134] Target: Pb 1.3 ((Zr 0.52 Ti 0.48 ) 0.88 Nb 0.12 ) O 3 Sintered body (amount of Nb occupying the B site: 12 mol%)

[0135] Substrate temperature: 475°C

[0136] Target-substrate (T-S) distance: 60mm

[0137] Film forming pressure: 0.30Pa

[0138] Film-forming gas: Ar / O 2 =97.5 / 2.5 (molar ratio)

[0139] Substrate potential Vsubstrate = -12V

[0140] After the start of film formation, the substrate potential V 基板 Set at +25V for 5 minutes to provide the perovskite layer as the initial layer.

[0141] Af...

Embodiment 2-6

[0151] Using the same method as Example 1 in Figure 5 A piezoelectric thin film and an ink jet recording head were prepared under the conditions described, and the resulting piezoelectric thin film and ink jet recording head were evaluated.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
piezoelectric charge coefficientaaaaaaaaaa
angleaaaaaaaaaa
Login to view more

Abstract

A piezoelectric film, a piezoelectric device, a liquid ejection device, and a method for preparing a piezoelectric film. A piezoelectric thin film formed on a substrate surface by a vapor deposition method without generating grain boundaries, the grain boundaries being substantially parallel to the substrate surface, and resulting from lamination. The inclination angle of the normal to the (100) plane of each crystal constituting the piezoelectric thin film to the normal to the surface of the substrate is not less than 6° and not more than 36°.

Description

technical field [0001] The present invention relates to a piezoelectric thin film, a piezoelectric device, a liquid ejecting apparatus, and a method for producing a piezoelectric thin film, and more particularly, to a piezoelectric thin film having improved durability in continuous driving, and a piezoelectric device including the piezoelectric thin film , a liquid ejecting device including the piezoelectric device, and a method of manufacturing the piezoelectric thin film. Background technique [0002] It is known to obtain a piezoelectric device by combining a piezoelectric thin film having a piezoelectric property of being displaced by application of a driving voltage applied to the piezoelectric thin film through the electrodes. [0003] For example, Japanese Patent Application Laid-Open No. 11-307833 describes a piezoelectric device in which the (100) orientation in a crystal in which a piezoelectric thin film is formed is inclined by 5° to 20°. Tilting the (100) orien...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/08H01L41/09H01L41/187H01L41/316B41J2/14B41J2/16B41J2/045B41J2/055B41J2/135C23C14/08C23C16/40H01L41/18
CPCB41J2/14233B41J2/1612B41J2/1642B41J2/1645B41J2/1646H10N30/1051H10N30/2047H10N30/8554H10N30/076
Inventor 直野崇幸
Owner FUJIFILM CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap