Deep groove side oxygen controlled planar isolated gate bipolar transistor

Abstract

The invention discloses a deep groove side oxygen controlled planar isolated gate bipolar transistor, belonging to the technical field of semiconductor power devices. A deep groove body electrode structure consisting of a P-type floating layer, a deep groove silicon dioxide oxide layer and a deep groove body electrode is prevented from being introduced to a planar isolated gate bipolar transistor in the conventional electric field, the introduction of an extra electric field is realized, and transverse consumption of an N-pillar is facilitated, so that the doping concentration of the N-pillar can be increased under the same withstand voltage, and the on-state voltage drop during positive break-over is lowered. A reverse electric field opposite to the original electric filed can be generated on the top of a device by applying a certain positive voltage to the body electrode, so that the original peak-value electric field is lowered and the breakdown voltage of the device is raised. By adopting the P-type floating layer in the deep groove body electrode structure, electric field concentration at the bottom of the deep groove can be prevented effectively. During positive break-over of the device, an electron accumulation layer can be formed at one side of a thick oxide layer by optimizing the positive voltage at one side of the body electrode, so that a low-impedance channel is provided for electric current.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a planar insulated gate bipolar transistor. Background technique [0002] Insulated gate bipolar transistor is the fastest growing hybrid power electronic device. It has the advantages of high input impedance, low control power, simple drive circuit and high switching speed of MOSFET, and has the advantages of high current density, low saturation voltage and strong current handling ability of bipolar power transistor. Widely used in induction cooker, UPS uninterruptible power supply, automotive electronic igniter, three-phase motor inverter, welding machine switching power supply and other products as power switch tube or power output tube. [0003] The insulated gate bipolar transistor, which was successfully researched and put into production in the early 1980s, is a non-transparent collector region through-type insulated gate bipolar transistor. Today, it is...

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Problems solved by technology

However, the upper part of this structure is still a superjunction device structure. It is necessary to precisely control the doping concentration and width-to-length ratio of the pillar to achieve charge compensation, which requires high process requirements and more thermal processes.

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