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Preparation method of patterned substrate

A patterned substrate and graphics technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inapplicability, achieve the effect of improving crystal quality, improving crystal growth quality, and reducing dislocation density

Inactive Publication Date: 2011-09-14
SINO NITRIDE SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the lateral epitaxy technology is mainly used for growing thick film GaN (more than 20 microns thick). In the application of blue-green LED epitaxy, because it requires a GaN layer of 2 to 10 microns, and the GaN layer in the LED epitaxial wafer The total thickness is only 3-5 microns, so it is not suitable for LED epitaxy

Method used

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  • Preparation method of patterned substrate
  • Preparation method of patterned substrate
  • Preparation method of patterned substrate

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preparation example Construction

[0065] The preparation method involved in the present invention is as follows:

[0066] Firstly, a certain thickness of single crystal heterogeneous material, such as SiO, is grown on a sapphire substrate using PECVD, MOCVD, CVD or magnetron sputtering techniques well known to those skilled in the art. 2 , Si 3 N 4 , SiC, Si, ZnO, GaAs series materials and other materials. The thickness can be from 100 nanometers to 3 micrometers, with 500 nanometers to 1.8 micrometers being preferred.

[0067] Secondly, using the glue spinning technology well known to those skilled in the art, the single crystal heterogeneous material (such as SiO 2 , Si 3 N 4 , SiC, Si, ZnO, GaAs series materials and other materials) uniformly coat photoresist on the sapphire substrate (this photoresist can be positive or negative, as long as the corresponding photoresist can be used to obtain the same pattern Yes), and the photoresist is evenly spun by the spun glue technology. The thickness of the photoresist i...

Embodiment 1

[0078] Complete SiO 2 To prepare the patterned substrate with periodic patterns, see attached Picture 9 :

[0079] Step 1. Select a 2-inch sapphire substrate 3 with a thickness of 430 microns; attached Picture 9 The first step is a 430-micron thick 2-inch sapphire substrate;

[0080] Step 2. Using PECVD technology to grow SiO with a thickness of 1.5 microns on the sapphire substrate 3 2 Film 2, attached Picture 9 The second step is to grow 1.5 microns thick SiO 2 The thin film 2 is a 430 micrometer thick 2-inch sapphire substrate 3;

[0081] 1~1.5 microns thick SiO 2 Thin film 2,2-430 micron thick sapphire substrate;

[0082] Step 3. Use the spinner to prepare the substrate SiO after step 2 2 The surface is evenly coated with 1.5 micron thick photoresist 1; attached Picture 9 The third step is SiO coated with 1.5 micron photoresist 1 2 / Sapphire substrate;

[0083] 1~1.5μm photoresist 1, 2~1.5μm thick SiO 2 Thin film 2,3~430 microns thick sapphire 3;

[0084] Step 4. SiO coated with...

Embodiment 2

[0090] SiO 2 Patterned substrate layered with sapphire to form periodic patterns

[0091] Step 1. Select a 2-inch sapphire substrate 3 with a thickness of 430 microns;

[0092] Step 2. Using PECVD technology to grow SiO with a thickness of 1.5 microns on the sapphire substrate 3 2 Film 2;

[0093] 1~1.5 microns thick SiO 2 Thin film 2, 2~430 microns thick sapphire substrate 3;

[0094] Step 3. Use the spinner to prepare the substrate SiO after step 2 2 The surface is evenly coated with 1.5 micron thick photoresist 1 to become SiO after coating 1.5 micron photoresist 2 / Sapphire substrate;

[0095] 1~1.5μm photoresist 1, 2~1.5μm thick SiO 2 , 3~430 microns thick sapphire substrate 3;

[0096] Step 4. SiO coated with 1.5 micron photoresist 1 2 / The sapphire substrate is exposed by a step exposure machine and developed to form a cylindrical pattern with a surface period of 3 microns and a cylindrical diameter of 2 microns, a periodic cylindrical photoresist pattern with a period of 3 micron...

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Abstract

The invention provides a method for preparing a patterned substrate from a heterogeneous material. The method comprises the following steps: preparing periodic patterns from a heterogeneous material; growing a single-crystal heterogeneous material with a certain thickness on a sapphire substrate; evenly coating photoresist on the sapphire substrate, on which the single-crystal heterogeneous material with a certain thickness grows, by using a spin-coating technique; forming the periodic patterns on the photoresist through exposure by using an exposure technique; and enabling the photoresist to show the periodic patterns by using a development technique, thus obtaining the periodic patterns prepared from the heterogeneous material; or proportionally layering the heterogeneous material and the sapphire to jointly form the patterned substrate having periodic patterns on the sapphire surface. The preparation method breaks through the characteristic that the traditional patterned substrate only uses the sapphire substrate to form periodic patterns, thereby achieving the purposes of enhancing the crystal growth quality and improving the light producing efficiency of a device.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and relates to a method for preparing a patterned substrate for growing a GaN epitaxial wafer. Background technique [0002] GaN, InGaN and AlGaN-based III / V nitrides are semiconductor materials that have attracted much attention in recent years. They have a continuously variable direct band gap of 1.9~6.2eV, excellent physical and chemical stability, and high saturated electron mobility. These characteristics make it the most preferred material for optoelectronic devices such as lasers, light-emitting diodes, etc. [0003] Because GaN single crystals are difficult to prepare, and it is difficult to find materials that match the GaN lattice, usually nitride optoelectronic devices are prepared on sapphire substrates. The lattice constant of sapphire and GaN material differs by about 15%, and the thermal expansion coefficient and chemical properties are also quite different. The la...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/20H01L33/00
Inventor 孙永健张国义贾传宇于彤军徐承龙童玉珍廉宗隅
Owner SINO NITRIDE SEMICON
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