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Processing method of thermal compensation molybdenum wafer surface coating

A technology of surface coating and processing method, which is applied in the field of processing the surface coating of thermally compensated molybdenum wafers, and can solve problems such as long preparation time, complicated equipment, and insufficient bonding force between the coating and the substrate

Active Publication Date: 2011-08-24
YIXING KEXING ALLOY MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, methods such as multi-arc ion plating, ion beam-assisted physical vapor deposition, and electron beam-assisted physical vapor deposition, which have emerged in recent decades, can also be used to deposit thin layers of rhodium and ruthenium on molybdenum wafers, but these technologies all have complicated equipment. , The equipment is expensive, the preparation time is long, the production cost is high, and the bonding force between the coating and the substrate is not high enough, etc.

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Embodiment 1, with the molybdenum disc to be processed as the workpiece, the source electrode is made of pure metal rhodium with a purity of 99.3%, according to the double-layer glow plasma metallization technology, with argon as the working gas, at a workpiece voltage of 800V and At the workpiece temperature of 960°C, the source voltage is 850V, and the treatment time is 50 minutes, a thin rhodium coating with a thickness of 0.26 μm can be formed. The interface is metallurgical bonding, and the critical shear stress of the rhodium coating at the interface is 1100N / mm 2 , the bonding force meets the application technical requirements that the coating does not fall off in boiling water for 100 minutes, and does not crack when bent at 120 degrees, and the surface roughness of the coating is R=0.23μm, so as to meet the technical requirements of thermally compensated molybdenum wafers for ultra-high-power thyristors , the deposition efficiency increased by 40%.

Embodiment 2

[0013] Embodiment 2. The source electrode is made of pure metal ruthenium with a purity of 99.9%, and the double-layer glow plasma metallization technology is also used. Under the workpiece voltage of 850V and the workpiece temperature of 1050°C, the source voltage is 900V, and the treatment time is 45 A thin ruthenium coating with a thickness of 0.35 μm can be formed in minutes, and the critical shear stress of the rhodium coating at the interface is 1050 N / mm 2 , the surface roughness of the coating is R=0.22μm, and the deposition efficiency is increased by 50%.

Embodiment 3

[0014] Embodiment 3. The source electrode is made of pure metal ruthenium with a purity of 99.1%. Under the workpiece voltage of 900V and the workpiece temperature of 1150°C, the source voltage is 1000V, and the double-layer glow plasma metallization treatment time is 30 minutes to form a thick It is 0.4μm ruthenium thin infiltration coating, the surface roughness of the coating is R=0.26μm, and the deposition efficiency is increased by 60%.

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Abstract

The invention discloses a processing method of a thermal compensation molybdenum wafer surface coating for manufacturing a high-power thyristor, and belongs to a high melting metal deposition processing method of pure molybdenum material surface. Rhodium or ruthenium with purity of more than 99 percent is used as a target; a thin layer of the rhodium or the ruthenium is deposited on a molybdenum wafer by a double-layer glow plasma diffusion metalizing technology; the adopted process conditions are as follows: the workpiece voltage is more than 600V and less than 900V, the source voltage is 850V to 1,000V and the workpiece temperature is more than 900 DEG C and less than 1,200 DEG C; and the treatment time is 0.5 to 2 hours. Compared with the conventional methods of plating and electron beam assisted physical vapor deposition and the like, the production flow is short, and the yield and the coating bonding force are high. The method particularly can be applied to processing of surface deposited rhodium or ruthenium coatings of thermal compensation molybdenum wafers of ultrahigh-power high-power thyristors in the fields of ultra (super) high voltage direct-current power transmission engineering, high power grid networking, high-speed locomotive traction and the like.

Description

technical field [0001] The invention relates to a processing method for heat-compensated molybdenum disc surface coating, in particular to a short-flow deposition processing method for rhodium or ruthenium coating on the surface of molybdenum discs used in ultra-high-power thyristors. Background technique [0002] The heat-compensated molybdenum wafer is used as the supporting substrate of the single crystal silicon wafer to dissipate heat, maintain the normal operation of the protection chip, and improve the service life of the thyristor. It is one of the key components in the manufacture of ultra-high-power thyristors. At present, ultra-high-power thyristors are widely used in fields such as ultra-high voltage direct current transmission projects, large power grid interconnection, and high-speed locomotive traction. The requirements for improving production efficiency and product quality are very urgent. [0003] At present, the surface coating processing method of large-d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/16C23C14/38
Inventor 俞叶
Owner YIXING KEXING ALLOY MATERIAL
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