Tungstic oxide semiconductor battery and preparation method therefor

A technology of tungsten oxide and semiconductor, which is applied in the field of tungsten oxide semiconductor battery and its preparation, and can solve the problems of making batteries with tungsten oxide semiconductor materials that have not been seen yet.

Inactive Publication Date: 2011-08-10
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To sum up, there is no report on the use of tungsten oxide semiconductor materials to make batteries

Method used

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  • Tungstic oxide semiconductor battery and preparation method therefor
  • Tungstic oxide semiconductor battery and preparation method therefor
  • Tungstic oxide semiconductor battery and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Example 1 Fabrication of a tungsten oxide semiconductor battery.

[0039] (1) Fabrication of planar electrodes. Cut the copper foil and zinc foil into metal strips with a width of 2mm and a length of 2cm, and paste them on the same horizontal plane on the surface of the plastic film with an adhesive or double-sided tape. The distance between the two electrodes is 2mm, and at the ends of the two electrodes Connect the lead wires separately, and then surround the electrode with an insulating plastic sheet about 2mm thick to form a 1.5cm long and 0.7mm wide, effective area of ​​1.05cm 2 slurry room.

[0040] (2) Preparation of tungsten oxide raw material. Prepare 100ml sodium tungstate reaction liquid according to the concentration ratio of sodium tungstate: acetic acid = 1: 0.2 moles, slowly add the sodium tungstate reaction liquid dropwise to 30ml of hydrochloric acid solution with a concentration of 2 moles per liter under magnetic stirring conditions, Gradually prod...

Embodiment 2

[0042] Example 2 Fabrication of a tungsten oxide semiconductor battery.

[0043] (1) Fabrication of three-dimensional electrode pairs. Cut the silver foil and the zinc foil into metal strips with a length of 4cm and a width of 2mm, respectively connect lead wires at the ends of the two metal strips, and paste the two metal strips on the surface of two 3mm thick insulating sheets with adhesive, and then It is oppositely pasted on the same horizontal surface of the plastic film, the distance between the two electrodes is 3mm, and an insulating sheet with a length of 4mm and a width of 3mm is added between the two electrodes to form a width of 3mm and a length between the two electrodes. 3.2cm effective area is 0.96cm 2 slurry room.

[0044] (2) Preparation of tungsten oxide raw material. Prepare 200ml sodium tungstate reaction solution according to the concentration ratio of sodium tungstate: citric acid = 1:0.3 moles, slowly add the sodium tungstate reaction solution dropwis...

Embodiment 3

[0046] Example 3 Fabrication of a tungsten oxide semiconductor battery.

[0047] (1) Fabrication of planar electrodes. Cut the copper foil and zinc foil into metal strips with a width of 2mm and a length of 3cm, and paste them on the same horizontal surface of the plastic film with adhesive or double-sided tape. The distance between the two electrodes is 2mm, and the ends of the two electrodes are respectively Connect the lead wire, and then surround the electrode with an insulating plastic sheet with a thickness of about 2mm to form a length of about 2.5cm and a width of about 0.6mm, with an effective area of ​​1.5cm 2 slurry room.

[0048] (2) Preparation of tungsten oxide raw material. Weigh 2 grams of 99.9% metal tungsten powder through 300 mesh, spread it in a magnetic evaporation dish, calcinate at 600°C for 2 hours, cool naturally to obtain tungsten oxide particles, and obtain light yellow tungsten oxide powder by ball milling.

[0049] (3) Fabrication of tungsten ox...

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PUM

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Abstract

The invention relates to a tungstic oxide semiconductor battery and a preparation method therefor. The preparation method comprises the following steps: taking tungstic oxide as a raw material, adding a conductive agent, an activating agent, an addition agent and an organic polymer film-forming agent to the raw material so as to prepare tungstic oxide semiconductor battery sizing, taking two metal foils with different work functions as a positive electrode and a negative electrode, pasting the positive electrode and the negative electrode in the same horizontal plane of a plastic substrate, then pouring the tungstic oxide semiconductor battery sizing into the surface of the electrodes, and drying and packaging the electrodes. The tungstic oxide semiconductor battery has the effects of (1) semiconductor chemical effect, electron transportation is carried out between the two metal electrodes with different work functions; (2) photoelectric effect, the electric current of the battery obviously increases when the battery is irradiated under the sun; and (3) thermoelectric effect, the electric current increases along with the rising of temperature when the battery is in a certain temperature range (5-100 DEG C).

Description

technical field [0001] The invention relates to a tungsten oxide semiconductor battery and a preparation method thereof. Background technique [0002] Tungsten oxide (WO 3 ) is an N-type semiconducting metal oxide, WO 3 Always have different degrees of anoxic state, that is, contain a certain amount of oxygen vacancies, so it is usually expressed as WO 3-x , and its corresponding spectral absorption properties are as follows: [0003] WO 3 Yellow 675nm [0004] W 18 o 49 (WO 2.72 ) Violet 620nm [0005] W 20 o 58 ( WO 2.9 ) blue 550nm [0006] Due to its excellent optical properties, electrical properties and stable semiconductor properties, tungsten oxide has been widely used in photocatalytic degradation of water to produce hydrogen, photocatalysts, energy storage materials, wave-absorbing materials, photochromism, electrochromism, gas Chromogenic and gas sensor and many other fields. For example, the patent 200510111479 "Tung...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/0224H01L31/18
CPCY02E10/50
Inventor 付敏恭杜国平朱为英
Owner NANCHANG UNIV
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