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Method for preparing Schottky contact ZnO nano array ultraviolet detection device

A Schottky contact and nano-array technology, which is applied in the manufacture of semiconductor devices, electrical components, and final products, to achieve the effects of improved absorption, stable performance, and low cost

Inactive Publication Date: 2011-08-03
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Method for preparing Schottky contact ZnO nano array ultraviolet detection device
  • Method for preparing Schottky contact ZnO nano array ultraviolet detection device
  • Method for preparing Schottky contact ZnO nano array ultraviolet detection device

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Effect test

Embodiment 1

[0024] 1. When growing one-dimensional ZnO nanoarrays by hydrothermal method, first spin-coat a seed solution with a concentration of 0.25 M on the cleaned FTO conductive glass (a mixed solution of zinc acetate, ethylene glycol methyl ether and ethanolamine according to a certain ratio), spin The coating rate was 3000 rpm, the time was 20 s, spin coating 3 times; the crystalline seed layer was fired at 350°C for 30 minutes; proportion of the mixed solution) in a reactor at 95°C for 24 hours. After the reaction, ZnO nano-arrays with a length of 2-3 um and neatly arranged can be obtained.

[0025] 2. When building the device, the dispensed dose of spin-coated PMMA photoresist on the ZnO nanoarrays was 5 ml / 1 × 2 cm 2 , the rotating speed is 2500 rpm, the time is 40 s, spin coating 3 times, so that the PMMA glue is evenly filled between the ZnO nano-arrays, and the thickness of the glue layer is 500 nm; Very good adhesion; when etching by oxygen plasma, set the parameters as ...

Embodiment 2

[0027] 1. When growing one-dimensional ZnO nanoarrays by hydrothermal method, the concentration of seed liquid (zinc acetate, ethylene glycol methyl ether and ethanolamine) was spin-coated on FTO at a concentration of 0.5 M, the spin-coating rate was 3500 rpm, and the time was 20s. times; sinter the crystalline seed layer at 400 °C for 30 minutes in an electric furnace; grow at 95 °C for 24 hours in 0.05 M growth solution (deionized water, zinc nitrate, and hexamethylenetetramine). Compared with Example 1, the ZnO nano-arrays obtained by the reaction are arranged more closely.

[0028] 2. When constructing the device, the dispensed dose is 8ml / 1×2 cm when spin-coating PMMA photoresist on the ZnO nanoarray 2, let stand for 10 s before spin-coating, then set the rotation speed to 3500 rpm, spin-coat for 50 s, spin-coat three times, the thickness of the adhesive layer is 750nm; bake at 175 °C for 2 hours; during oxygen plasma etching, set Air pressure is 10 Pa, power: 100 W, O...

Embodiment 3

[0030] 1. When growing one-dimensional ZnO nanoarrays by hydrothermal method, the concentration of the seed solution (a mixed solution of zinc acetate, ethylene glycol methyl ether and ethanolamine) was spin-coated on FTO at a concentration of 0.5 M, the spin-coating rate was 3500 rpm, and the time was 20s. Spin coating 3 times; sinter the crystalline seed layer at 400 °C for 30 minutes in an electric furnace; grow at 95 °C for 24 hours in a growth solution with a concentration of 0.05 M (a mixed solution of deionized water, zinc nitrate and hexamethylenetetramine) , a neat ZnO nanoarray can be obtained.

[0031] 2. When constructing the device, when the PMMA photoresist is spin-coated on the ZnO nanoarray, the dispensed dose is 8ml / 1×2 cm 2 , the first rotation speed is 600 rpm, spin coating 6 s, the second rotation speed is 3500 rpm, spin coating 60 s, such spin coating process is repeated 3 times, the glue layer thickness is 1000nm, and the photoresist layer of spin coati...

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Abstract

The invention provides a method for preparing a Schottky contact ZnO nano array ultraviolet detection device. The method comprises the following steps of: growing a ZnO nano array on a piece of cleaned fluorine-doped tin oxide (FTO) conductive glass; spinning polymethyl methacrylate (PMMA) photoresist on the well grown ZnO nano array so that the photoresist permeates the gaps of the array; performing pre-drying so that the photoresist is tightly adhered with the array; performing oxygen plasma etching after pre-drying to etch the PMMA photoresist at the end part of the array so as to facilitate electrode deposition of the next step; performing deposition of metal electrodes with thickness of 50 to 100 nanometers by using a vacuum coating machine; performing annealing treatment so that the electrodes are better contacted with the ZnO nano array; and finally, leading out copper leads from the Pt electrode and the FTO electrode to perform a photoelectric performance test. The ultraviolet of the prepared device can be irradiated from the back, and the device has simple structure, low cost and stable performance and provides possibility for later practical application.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanometer materials and nanometer functional devices, and in particular provides a method for preparing a Schottky contact type ZnO nano-array ultraviolet light detection device. The ultraviolet light detection device constructed by the method can allow ultraviolet light to be incident from the back, and has a simple structure, low cost and stable performance. Background technique [0002] Ultraviolet light detectors have broad application prospects in national defense, ultraviolet astronomy, environmental monitoring, fire detection, turbine engine combustion efficiency monitoring, combustible gas composition analysis, and biological cell cancer detection, and have extremely high military and civilian values. In recent years, it has become one of the hot spots in the field of photoelectric detection in the world. Due to the advantages of small size, wide spectral response range, high quant...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/108H01L31/0224B81C1/00
CPCY02P70/50
Inventor 张跃林伟花闫小琴张晓梅秦子张铮
Owner UNIV OF SCI & TECH BEIJING
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