Conductive particle, anisotropic conductive film, joined body, and connecting method

A conductive particle, anisotropic technology, used in conductive connections, electrical component connections, conductive materials dispersed in non-conductive inorganic materials, etc. problems, to achieve the effects of suppressing stress, fully conducting reliability, and improving spreadability

Active Publication Date: 2011-06-08
DEXERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] When gold with high conductivity is used as the outermost layer of conductive particles, the conduction reliability can be ensured for the ITO substrate that has been used as an electrode material, but the smooth IZO substrate with metal oxide (insulator) formed on the surface , it cannot break through the metal oxide (insulator) formed on the surface and enter fully, and cannot ensure sufficient conduction reliability
[0009] In addition, there has not been found a material that can suppress stress while maintaining high hardness (cracks are less likely to occur even in a state of being crushed during connection), and can ensure sufficient conduction reliability not only for ITO substrates but also for IZO substrates. Conductive particles

Method used

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  • Conductive particle, anisotropic conductive film, joined body, and connecting method
  • Conductive particle, anisotropic conductive film, joined body, and connecting method
  • Conductive particle, anisotropic conductive film, joined body, and connecting method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0144] A palladium catalyst (manufactured by Muromachi Technos, trade name: MK-2605) was loaded on the surface of the resin particles produced in Comparative Example 1, and the resin particles were activated with an accelerator (manufactured by Muromachi Technos, trade name: MK-370); The latter resin particles are added to a mixed solution of palladium chloride, nickel chloride, ethylenediamine, thiodiacetic acid, and sodium hypophosphite adjusted to pH 8 with ammonia at a water bath temperature of 60°C to make the outermost Conductive particles A3 coated with a nickel-palladium alloy (the outermost layer is a nickel-palladium alloy layer); then, as in Comparative Example 1, evaluation of conductive particles A3, preparation of anisotropic conductive film, and IZO wiring The preparation of assembly A3, the preparation of ITO wiring assembly A3, and the measurement of the connection resistance of assembly A3. The results are shown in Table 1 and Table 2.

Embodiment 2

[0146] In Comparative Example 1, the following nickel-palladium alloy plating was used instead of gold plating, except that the preparation of conductive particles A4, the evaluation of conductive particles A4, and the evaluation of the anisotropic conductive film were performed in the same manner as in Comparative Example 1. Preparation, preparation of IZO wiring assembly A4, preparation of ITO wiring assembly A4, and measurement of connection resistance of assembly A4. The results are shown in Table 1 and Table 2.

[0147]

[0148] Add conductive particles coated with nickel to the mixed solution of palladium chloride, nickel chloride, ethylenediamine, thiodiacetic acid and sodium hypophosphite. After mixing, adjust the pH to 8 with ammonia water, and the temperature of the water bath is 60 At °C, conductive particles A4 in which the outermost layer is plated with a nickel-palladium alloy (the outermost layer is a nickel-palladium alloy layer) are prepared.

Embodiment 3

[0150] After the resin particles produced in Comparative Example 1 were dispersed in deionized water for 3 minutes, nickel paste (100 nm) was added and stirred to obtain substrate particles with nickel paste attached. Then, the same treatment as the pre-process and post-process of the electroless plating of nickel plating of Comparative Example 1 was performed to prepare conductive particles with nickel protrusions. Then, the nickel-palladium alloy plating in Example 2 was performed to prepare conductive particles A5. Then, in the same manner as in Comparative Example 1, the evaluation of conductive particles A5, the preparation of anisotropic conductive film, and the evaluation of IZO wiring assembly A5 were performed. Preparation, preparation of ITO wiring assembly A5, and measurement of connection resistance of assembly A5. The results are shown in Table 1 and Table 2.

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Abstract

Disclosed are conductive particles wherein stress can be suppressed by improving spreadability while maintaining high hardness (cracks hardly occur even when the particles are crushed during the connection). The conductive particles assure sufficient electrical connection reliability not only for ITO substrates but also for IZO substrates. An anisotropic conductive film comprising the conductive particles, a joined body comprising the anisotropic conductive film, and a connecting method using the anisotropic conductive film are also disclosed. Each of the conductive particles comprises a polymer fine particle and a conductive layer formed on the surface of the polymer fine particle, and is characterized in that the outermost shell of the conductive layer is composed of a nickel-palladium alloy layer.

Description

Technical field [0001] The present invention relates to conductive particles, anisotropic conductive films, joined bodies, and connection methods. Background technique [0002] Among the circuit components such as the connection between the liquid crystal display and the tape carrier package (Tape Carrier Package: TCP), the connection between the flexible printed circuit (FPC) and the TCP, or the connection between the FPC and the printed circuit board For the connection between them, a circuit connecting material in which conductive particles are dispersed in an adhesive (for example, an anisotropic conductive adhesive) is often used. In addition, recently, when assembling a semiconductor silicon chip on a substrate, a bonding wire is not used for connection between circuit elements, but a semiconductor silicon chip is directly mounted on the substrate face down to perform so-called flip chip assembly. In this flip-chip assembly, circuit connection materials such as anisotropic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/00H01B5/16H01R11/01H05K1/14H05K3/32
CPCH05K2201/0212H05K2201/0218H05K2201/0221H05K3/323Y10T428/2991Y10T428/26Y10T428/254Y10T29/4913Y10T428/31663Y02E60/10H01B1/16H01B5/16H01M4/0407H01R11/01H05K1/14
Inventor 石松朋之大关裕树浜地浩史
Owner DEXERIALS CORP
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