Metal oxide semiconductor field effect transistor and manufacturing method thereof

Abstract

The invention discloses a metal oxide semiconductor field effect transistor (MOSFET), comprising a silicon substrate and a source and a drain which are formed by doped silicon-germanium polymers, wherein buffer layers formed by injection of germanium plasmas are respectively arranged between the silicon substrate and the source as well as between the silicon substrate and the drain. The invention also discloses a manufacturing method of the MOSFET. The invention can effectively avoid the defects caused by stress relaxation of the silicon-germanium polymer layers.

Description

Technical field [0001] The invention relates to the technical field of semiconductor integrated current manufacturing, in particular to an improved metal oxide semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a field effect transistor that can be widely used in analog and digital circuits. -effect transistor). MOSFETs can be divided into n-type and p-type MOSFETs according to the polarity of their "channels". They are usually called NMOSFET and PMOSFET. Other abbreviations include NMOS FET, PMOS FET, nMOSFET, pMOSFET, etc. [0003] figure 1 It is a cross-sectional view of a typical NMOSFET. Using P-type silicon semiconductor material as the silicon substrate 101, two shallow trenches (STI) are etched on the silicon substrate 101, and n-type material is deposited in the shallow trenches to form two n-type regions 102 and 103; A silicon oxide film is deposited on th...

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Problems solved by technology

However, MSA will cause high thermal stress inside the device, and the SiGe in the source / drain will experience stress relaxation in a high-temperature environment. Under the combined effect of the above factors, SiGe may undergo relative displacement and cause stacking (Overlay, OVL) problems, defect diffusion problems, etc., which lead to device performance degradation

A worse case occurs when the defect diffuses from the SiGe layer deep into the silicon substrate, resulting in a substantial increase in the connection leakage rate

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