Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element

A technology for epitaxial substrates and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as difficulties in epitaxial growth, large differences in growth temperature, and no clear implementation methods.

Active Publication Date: 2011-02-23
NGK INSULATORS LTD
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the growth temperature difference between InN and AlN is large, it is difficult to control the epitaxial growth in the mixed crystal composition including the two, so the specific realization means of these schemes or the existence of other effective composition examples have not been clarified.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
  • Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
  • Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0060]

[0061] figure 1 It is a schematic cross-sectional view schematically showing the configuration of the HEMT element 10 in the first embodiment of the present invention. The HEMT element 10 has a structure in which a substrate 1 , a buffer layer 2 , a channel layer 3 , and a barrier layer 5 are stacked. It is a preferable example that the buffer layer 2 , the channel layer 3 and the barrier layer 5 are epitaxially formed by MOCVD (metal organic chemical vapor deposition) (described in detail below). Hereinafter, a laminated structure formed by laminating the substrate 1 , the buffer layer 2 , the channel layer 3 , and the barrier layer 5 is also referred to as an epitaxial substrate 10A. in addition, figure 1 The thickness ratios of the layers in the figures do not reflect actual ratios.

[0062] In the following, the formation of each layer will be described for the case of using the MOCVD method, but as long as the method can form each layer with good crystallini...

no. 2 Embodiment approach

[0116]

[0117] Figure 7 It is a schematic cross-sectional view schematically showing the configuration of the HEMT element 20 in the second embodiment of the present invention. The HEMT element 20 has a configuration in which a spacer layer 4 is inserted between the channel layer 3 and the barrier layer 5 of the HEMT element 10 in the first embodiment. Components other than the spacer layer 4 are the same as those of the HEMT element 10 in the first embodiment, so detailed description thereof will be omitted. In addition, hereinafter, the stacked structure formed by stacking the substrate 1 , the buffer layer 2 , the channel layer 3 , the spacer layer 4 , and the barrier layer 5 is also referred to as an epitaxial substrate 20A.

[0118] The isolation layer 4 is a layer formed by a group III nitride having a thickness in the range of 0.5 nm to 1.5 nm, and the total thickness of the isolation layer 4 and the barrier layer 5 is 5 nm or less. x3 Al y3 Ga z3 The N (x3+y3+z...

Embodiment 1

[0136] In this example, the HEMT element 10 of the first embodiment was fabricated. Specifically, a plurality of epitaxial substrates 10A having different combinations of channel layer 3 and barrier layer 5 were produced, and HEMT elements 10 were produced using them.

[0137] When fabricating the epitaxial substrate 10A, first, a plurality of 6H-SiC substrates having a diameter of 2 inches in the (0001) plane orientation were prepared as substrates 1 . Each substrate 1 was placed in the reactor of the MOCVD furnace, and after vacuum displacement, the pressure inside the reactor was set at 30 kPa to form an atmosphere gas in a hydrogen / nitrogen mixed flow state. Next, the temperature of the substrate is raised by heating the susceptor.

[0138] After the susceptor temperature reached 1050° C., Al raw material gas and ammonia gas were introduced into the reactor to form an AlN layer with a thickness of 200 nm as the buffer layer 2 .

[0139] Then, the susceptor temperature is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
roughnessaaaaaaaaaa
roughnessaaaaaaaaaa
Login to View More

Abstract

Disclosed is an epitaxial substrate that can realize the preparation of an HEMT element which has good two-dimensional electron gas properties and can realize normally-off operation. The epitaxial substrate comprises a channel layer formed of a first group III nitride represented by Inx1Aly1Gaz1N wherein x1 + y1 + z1 = 1 and which has a composition satisfying x1 = 0 and 0 <= y1 <= 0.3. The epitaxial substrate further comprises a barrier layer formed of a second group III nitride represented by Inx2Aly2Gaz2N wherein x2 + y2 + z2 = 1 and which has a composition that falls within an area surrounded by four straight lines determined dependent upon the composition of the first group III nitride (AlN molar fraction) on a ternary phase diagram in which InN, AlN, and GaN constitute vertices. The barrier layer has a thickness of not more than 5 nm.

Description

technical field [0001] The invention relates to a multilayer structure epitaxial substrate composed of group III nitride semiconductors, in particular to a multilayer structure epitaxial substrate for electronic equipment and a manufacturing method thereof. Background technique [0002] Nitride semiconductors are attracting attention as next-generation semiconductor materials for high-frequency / high-power devices because they have high breakdown electric fields and high saturation electron velocities. In particular, a multilayer structure formed by laminating layers composed of AlGaN and GaN has the following characteristics: through the strong polarization (spontaneous polarization and piezoelectric polarization) peculiar to nitride materials, High-concentration two-dimensional electron gas (2DEG) is generated at the interface (heterointerface), and high electron mobility transistors (HEMTs) in which a related multilayer structure is used as a substrate have been actively d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L29/201H01L21/205H01L29/812C30B29/38H01L21/338C23C16/34H01L29/778
CPCH01L29/2003H01L29/7786H01L21/02458H01L21/0262H01L29/778H01L29/201H01L21/02433C23C16/303H01L29/66462H01L21/02378H01L21/0254H01L21/0237
Inventor 三好实人仓冈义孝角谷茂明田中光浩
Owner NGK INSULATORS LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com