Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate

Abstract

The invention relates to a method for preparing a monoclinic gallium oxide single-crystal film on a magnesium oxide substrate. The monoclinic gallium oxide single-crystal film is epitaxially grown on the magnesium oxide substrate with a cubic structure under a vacuum condition by organic metal chemical vapor deposition equipment through an organic metal chemical vapor deposition process, wherein trimethylgallium serves as an organic metal source; nitrogen serves as a carrier gas; and oxygen serves as an oxidizing gas. The film is an epitaxial material with a single-crystal structure; the forbidden bandwidth of the film material is 4.86eV; and the film is applicable to the manufacturing of ultraviolet transparent and short-wavelength photoelectronic devices.

Description

technical field [0001] The invention relates to a monoclinic gallium oxide (β-Ga 2 o 3 ) thin film preparation method belongs to the technical field of semiconductor optoelectronic materials. Background technique [0002] Gallium oxide (β-Ga 2 o 3 ) is a wide-bandgap semiconductor material with a bandgap width of about 4.9eV at room temperature. It has the advantages of high transmittance in the visible light region, UV transparency, potential conductivity, and stable physical and chemical properties. At present, gallium oxide thin film materials are mainly used in insulating layers of Ga-based semiconductor materials, gas sensors and ultraviolet filter materials, and can be widely used in industrial production such as optical anti-reflection and passivation coatings. High-quality gallium oxide single crystal thin films are important materials for the preparation of ultraviolet transparent and short-wavelength optoelectronic devices. [0003] The current preparation of ...

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Problems solved by technology

However, gallium oxide films prepared by these conventional methods are generally amorphous or polycrystalline, and there are a large number of defects inside the film, and the crystal quality is poor, which limits its application in the fields of optoelectronic materials and devices.

[0005] (2) Crystalline β-Ga 2 o 3 The preparation of thin films often requires very high temperature (≥900°C), and due to the large lattice mismatch of most substrates, even if crystalline gallium oxide thin films can be prepared by conventional methods, most of them are of poor crystal quality. poor polymorphic film

[0006] (3) Although methods such as MBE and PLD can be used to achieve epitaxial growth of gallium oxide thin films on substrate materials such as gallium oxide and sapphire, the growth rate is slow, the film forming area is small, and the crystal quality is not ideal, especially not suitable for industrial production.

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