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GaN-based light emitting diode and preparation method thereof

A light-emitting diode, gallium nitride-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of total reflection loss of light emission, limitation of light emission efficiency, etc., to reduce the impact, enhance the light output efficiency, and improve the electro-optic conversion efficiency. Effect

Inactive Publication Date: 2011-01-05
SUZHOU NANOJOIN PHOTONICS
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Problems solved by technology

[0005] The above-mentioned conventional GaN light-emitting diode active region is generally a planar structure, and there are problems such as loss of luminous total reflection, and GaN-based light-emitting diodes are mostly epitaxial on the sapphire (0001) surface, and the internal polarization electric field has a negative effect on the electrons and holes in the quantum well. The distribution has an important influence, which limits the improvement of luminous efficiency

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  • GaN-based light emitting diode and preparation method thereof
  • GaN-based light emitting diode and preparation method thereof

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Embodiment 1

[0043] see figure 1 Shown, a gallium nitride-based light-emitting diode, its preparation method comprises the following steps:

[0044] (1) On a substrate 1 such as a planar sapphire substrate, a patterned sapphire substrate, a gallium nitride substrate, a silicon carbide substrate or a silicon substrate, a buffer layer 2 and an intrinsic GaN layer 31 and N-type doped GaN are grown The epitaxial layer 32; the total thickness of the intrinsic GaN layer and the N-type doped GaN epitaxial layer is 3-7 μm, depending on the substrate type;

[0045] (2) Prepare an N-type GaN patterned template structure on the N-type doped GaN epitaxial layer by reactive ion etching, holographic exposure method or electron beam exposure method; the N-type GaN patterned template structure is a continuous yurt shape, The diameter, height, and distance between adjacent yurts are matched to each other, and its magnitude extends from nanometers to micrometers;

[0046] (3) Epitaxial In on the N-type Ga...

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Abstract

The invention discloses a GaN-based light emitting diode which comprises a substrate, a buffer layer arranged on the substrate, an intrinsic GaN layer directly epitaxially arranged on the buffer layer, an N-type doped GaN epitaxial layer provided with an N-type GaN graphical template structure, an InxGal-xN / AlaInbGa1-a-bN multiple quantum well, an AlyGal-yN or AlyGal-yN / AlaInbGa1-a-bN superlattic electronic blocking layer, a P-type GaN layer, an ITO contact layer, a P-type electrode and an N-type electrode, wherein the N-type GaN graphical substrate, the multiple quantum well, the superlattic electronic blocking layer and the P-type GaN layer are all in a curved surface structure. The invention strengthens the light extraction efficiency of the light emitting diode device, also realizes wide spectrum output of the light emitting diode and promotes the development of white light illumination.

Description

technical field [0001] The invention relates to a gallium nitride-based light-emitting diode, which belongs to the technical field of semiconductors. Background technique [0002] Semiconductor lighting light-emitting diodes have significant advantages such as long life, energy saving and environmental protection. They are considered to be another revolution in lighting technology after incandescent lamps and fluorescent lamps. They are currently the focus of research and development and industry attention in the field of semiconductors and lighting in the world. . [0003] The wide bandgap semiconductor material gallium nitride (GaN) has excellent physical and chemical properties, and the bandgap width of ternary and quaternary alloys composed of group III nitrides such as indium nitride (InN) and aluminum nitride (AlN) can be It can be adjusted continuously between 0.7 and 6.2eV, and the InAlGaN quaternary alloy with any composition has a direct band gap. All have broad ...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/24
Inventor 范亚明王怀兵郝国栋刘建平黄小辉吴思孔俊杰黄强王峰
Owner SUZHOU NANOJOIN PHOTONICS
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