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Sn-doped ZnO superfine nanowires and synthesis method thereof

A synthesis method and fatty acid zinc technology, applied in the field of nanomaterials, can solve the problems of poor doping uniformity, complicated process, limited application, etc., and achieve the effects of easy industrial production, strong quantum confinement effect, and simple preparation process

Active Publication Date: 2012-02-15
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main disadvantages of these preparation methods are expensive equipment or complex process, poor controllability, poor doping uniformity, etc., and the diameter of the obtained Sn-doped ZnO nanowires is generally hundreds of nanometers to tens of nanometers, it is difficult to observe obvious Quantum confinement effect, and the inhomogeneity of doping also greatly limits its application in the field of nano-optoelectronic devices

Method used

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  • Sn-doped ZnO superfine nanowires and synthesis method thereof
  • Sn-doped ZnO superfine nanowires and synthesis method thereof
  • Sn-doped ZnO superfine nanowires and synthesis method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0020] 1) Take by weighing 1mmol zinc stearate, 0.1mmol tin stearate (molar ratio is 10:1), 7mmol oleylamine and 10ml 1-octadecene are placed in a 50ml reaction flask, under an inert protective atmosphere, Magnetic stirring was used to raise the temperature to 140° C., and then keep the temperature for 20 minutes.

[0021] 2) Raise the temperature to 340° C. under an inert protective atmosphere, keep it warm for 30 minutes, cool the reaction solution to room temperature with a water bath, and centrifuge the reaction mixture to obtain Sn-doped ZnO ultrafine nanowires.

[0022] After the green product obtained is dried, carry out XRD test, test result sees figure 1 . figure 1 The peaks in are all the main peak positions of the wurtzite ZnO phase, which proves that the obtained product has a wurtzite structure; the TEM electron microscope photo of the product is shown in figure 2 , it can be seen from the figure that the diameter of the nanowire is 3-5 nanometers and the lengt...

Embodiment 2

[0024] 1) Weigh 1mmol of zinc stearate, 0.2mmol of tin citrate (5:1 molar ratio), 10mmol of octadecylamine and 10ml of n-octyl ether in a 50ml reaction flask, and then keep warm for 10 minutes.

[0025] 2) Under the protection of an inert atmosphere, raise the temperature to 250° C., keep it warm for 60 minutes, cool the reaction solution to room temperature with a water bath, and centrifuge the reaction mixture to obtain Sn doped particles with a diameter of 2 to 6 nanometers and a length of 100 to 200 nanometers. doped ZnO ultrafine nanowires.

Embodiment 3

[0027] 1) Weigh 1mmol of zinc stearate, 0.3mmol of tin citrate (molar ratio is 10:3), 5mmol of dodecylamine and 12ml of diphenyl ether in a 50ml reaction flask, under the protection of an inert atmosphere, magnetically stir and heat up to 150°C, and then keep warm for 30 minutes.

[0028] 2) Under the protection of an inert atmosphere, raise the temperature to 210° C., keep it warm for 20 minutes, cool the reaction solution to room temperature with a water bath, and centrifuge the reaction mixture to obtain Sn doped particles with a diameter of 2 to 4 nanometers and a length of 100 to 300 nanometers. doped ZnO ultrafine nanowires.

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Abstract

The invention discloses Sn-doped ZnO superfine nanowires and a synthesis method thereof. The naowires have a hexagonal wurtzite structure, a diameter of 1 to 10 nanometers and a length of 2 to 10,000 nanometers. The synthesis method comprises the following steps of: mixing zinc fatty acid, tin fatty acid, fatty amine and a high boiling point organic solvent and putting the mixture into a reactionflask; heating to the temperature of between 50 and 200 DEG C with magnetic stirring under an inert protective atmosphere and keeping the temperature for 1 to 1,000 minutes; then heating to the temperature of between 200 and 350 DEG C under the inert protective atmosphere and keeping the temperature for 1 to 1,000 minutes; and centrifugally separating to obtain the Sn-doped ZnO superfine nanowires. The nanowires have the advantages of simple preparation process, low cost, high repeatability, easy industrial production and possible application to various fields such as transparent electroconductive films, flexible display devices, thin-film transistors, sensors and the like.

Description

technical field [0001] The invention relates to the technical field of nanometer materials, in particular to a Sn-doped ZnO ultrafine nanowire and a synthesis method thereof. Background technique [0002] ZnO is a II-VI compound semiconductor material with a band gap of 3.37eV at room temperature and an exciton binding energy of 60meV. It is ideal for preparing semiconductor lasers, ultraviolet detectors, blue-violet light-emitting diodes, etc. Ideal material. Due to the quantum confinement effect, surface effect, and piezoelectric effect, ZnO one-dimensional nanomaterials have superior optical, electrical, and piezoelectric properties than bulk materials, and have become a hot spot in the field of optoelectronic information research. Doping Sn in ZnO nanowires, allowing Sn to replace the position of Zn, can realize the adjustment of energy band and the change of electrical properties. Significance. [0003] At present, there are some methods for synthesizing Sn-doped ZnO...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B29/62C30B7/14C01G9/02
Inventor 金一政陈栋栋叶志镇
Owner ZHEJIANG UNIV
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