Manufacturing method of cadmium telluride film solar cell

A technology for thin-film solar cells and manufacturing methods, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of high production cost, difficult mass production, and complicated manufacturing methods, and achieves lower prices and simplified manufacturing. technology, the effect of improving photoelectric conversion efficiency

Active Publication Date: 2010-12-29
XIAN JIAOTONG LIVERPOOL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for manufacturing cadmium telluride thin-film solar cells, which solves the problems in the prior art that short-distance evaporation methods are used to manufacture thin-film solar cells, the manufacturing method is complicated, it is difficult to carry out large-scale production, and the production cost is expensive.

Method used

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  • Manufacturing method of cadmium telluride film solar cell
  • Manufacturing method of cadmium telluride film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The preparation of embodiment 1 cadmium telluride thin film solar cell

[0047] 1) Fabrication of P-type cadmium telluride thin film laminates

[0048] (1) Clean the copper thin plate or stainless steel thin plate used to make the battery, rinse it with clean water, clean it with ultrasonic waves, and then bake it until it is completely dry.

[0049] (2) Preparation of cadmium telluride slurry: mix cadmium telluride powder and tellurium powder at a weight ratio of 100:1, and mix for 6-8 hours by ball milling.

[0050] (3) Using absolute ethanol / polar polymer solution-dimethylformamide to blend cadmium telluride and tellurium mixed powder into a slurry,

[0051] (4) Printing and coating the mixed paste of cadmium telluride and tellurium on the metal back electrode plate by means of screen printing.

[0052] (5) Put the metal plate coated with the slurry into an annealing furnace, anneal at 600° C. for about 40 minutes, and then raise the temperature to 850° C. for abou...

Embodiment 2

[0065] The preparation of embodiment 2 cadmium telluride thin-film solar cells

[0066] (1) Select a copper plate with a thickness of 0.05mm or more (both copper and brass are acceptable) as the support and back electrode of the battery, ultrasonically clean and dry.

[0067] (2) Mix cadmium telluride powder and tellurium powder in a weight ratio of 100:1, and mix for 6-8 hours by ball milling.

[0068] (3) Blend the cadmium telluride and tellurium mixed powders into a slurry by using absolute ethanol / polar polymer solution-dimethylformamide. The slurry is at medium viscosity and stirred for at least 1-2 hours.

[0069] (4) Using the screen printing method, the cadmium telluride and tellurium mixed paste was printed and coated on the metal back electrode plate, and then baked in an oven at 350° C. for one hour.

[0070] A nanoscale cadmium telluride nano layer is evaporated on the metal plate coated with the cadmium telluride film by vacuum evaporation method, as a transition...

Embodiment 3

[0079] The preparation of embodiment 3 cadmium telluride thin film solar cells

[0080] Fabrication of p-type CdTe thin film laminate and p-n junction

[0081] (1) Clean the metal plates, stainless steel sheets, and copper sheets used to make battery supports and back electrodes. Ultrasonic clean and bake until completely dry.

[0082] (2) Mix cadmium telluride powder and tellurium powder in a weight ratio of 100:1, grind and mix for 6-8 hours by ball milling.

[0083] (3) The mixed powder of cadmium telluride and tellurium is mixed into a slurry by using absolute ethanol solution / polar solution-dimethylformamide, and the viscosity of the slurry is moderate.

[0084] (4) Printing and coating the mixed paste of cadmium telluride and tellurium on the metal back electrode plate by means of screen printing.

[0085] (5) Put the metal plate coated with the slurry into an annealing furnace, anneal at 600°C for about 40 minutes, and then raise the temperature to 900°C for about 30...

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Abstract

The invention discloses a manufacturing method of a cadmium telluride film solar cell, which is characterized by comprising the following steps of: (1) by adopting a copper sheet or a stainless steel sheet as a back electrode of the cadmium telluride film solar cell, coating p (Positve) type cadmium telluride slurry on the metal sheet by a screen printing method to manufacture a p type cadmium telluride film; controlling the annealing temperature of the coated p type layer at 600 DEG C, wherein annealing time is 40 minutes; and then raising the temperature to 850 DEG C and preserving for 1 hour; (2) manufacturing an intermediate transition layer and an n (Negative) type cadmium telluride window layer on the p type cadmium telluride film to form a p-n junction; (3) evaporating or printing a comb-shaped front electrode on the cadmium telluride film of the window layer; and (4) wiring and welding the front and the back electrodes to finish the manufacture of the cadmium telluride film solar cell. The method is simple and convenient as well as easy for scale production, and can promote the scale production, largely reduce the cost and the price of the cadmium telluride film solar cell, and enhance the photovoltaic conversion efficiency of the cell.

Description

technical field [0001] The invention belongs to the production technical field of thin-film solar cells, and in particular relates to a manufacturing method of cadmium telluride thin-film solar cells. Background technique [0002] Due to the protection requirements of the human living environment, the development of a low-carbon economy requires the use of clean energy with no pollution or minimal pollution, the development and utilization of solar energy has emerged as the times require. At present, solar power generation technology and applications are developing rapidly worldwide. At present, the output produced by a relatively large enterprise in China is equivalent to the total amount of the world ten years ago. The principle of solar power generation technology is: sunlight shines on the semiconductor p-n junction to form new hole-electron pairs. Under the action of the electric field of the p-n junction, the holes flow from the n region to the p region, and the electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCY02P70/50
Inventor 吴洪才
Owner XIAN JIAOTONG LIVERPOOL UNIV
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