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Grinding composite for planarization metal layer

A composition and planarization technology, applied in polishing compositions containing abrasives, etc., can solve problems such as slowing down the etching rate

Active Publication Date: 2014-03-12
UWIZ TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned patents do not disclose that the use of a common inhibitor can slow down the etching rate of the abrasive composition for metal under the condition of maintaining a high grinding removal rate, and is suitable for both the first and second stages of copper metal grinding

Method used

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  • Grinding composite for planarization metal layer
  • Grinding composite for planarization metal layer
  • Grinding composite for planarization metal layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-5

[0022] According to list in table 1, use the abrasive slurry composition that comprises silica sol abrasive grain, glycine, hydrogen peroxide, 1-H-benzotriazole (BTA), 1,2,4-triazole and water Implement samples for testing.

[0023] Table 1

[0024]

[0025] The grinding test was performed under the following conditions.

[0026] Grinding machine table: Mirra polisher (Applied Materials)

[0027] Wafer type: 8”, 15KA Copper blanket wafer (Ramco Co)

[0028] Grind Downforce: 3, 1.5 and 0psi

[0029] Platform speed: 93rpm

[0030] Vehicle speed: 87rpm

[0031] Polishing pad: IC1010 (Rohm Hass Electronic Materials)

[0032]Slurry flow rate: 150ml / min.

[0033] The wafer uses a 4-point probe to measure the thickness of the copper film before and after grinding to calculate the rate. The results are shown in Table 2:

[0034] Table 2

[0035]

[0036]

[0037] Wherein, the RR refers to the grinding removal rate (Removal Rate), and the DER refers to the dynamic etc...

Embodiment 5-6

[0040] According to list in table 3, use the abrasive slurry composition that comprises silica sol, glycine, hydrogen peroxide, 1-H-benzotriazole (BTA), 1,2,4-triazole and water Implement samples for testing.

[0041] table 3

[0042]

[0043] The grinding test was carried out according to the following conditions, and the results are recorded in Table 4.

[0044] Wafer type: MIT854patterned wafer (Ramco Co)

[0045] Grinding Downforce: 3psi

[0046] Platform speed: 93rpm

[0047] Vehicle speed: 87rpm

[0048] Slurry flow rate: 150ml / min.

[0049] Use the HRP220profiler (KLA-Tenco) instrument to measure the degree of metal disc sinking at each measurement point after grinding. During the measurement, a 100x100 micron copper wire is used as the measurement point, and the results of measuring the crystal grains at the center, middle and edge of the wafer are recorded in the table. 4:

[0050] Table 4

[0051]

[0052] These metal disc sinking values ​​are 30% over-...

Embodiment 7-13

[0054] As listed in Table 5, the test was performed using a control sample of abrasive composition comprising silica sol abrasive grains, glycine, hydrogen peroxide, benzotriazole, 1,2,4-triazole and water.

[0055] table 5

[0056]

[0057] Each embodiment of Table 5 is on the grinding machine platform of Mirra polisher (Applied Materials), and carries out grinding test according to the condition listed in embodiment 1-5, and the wafer of grinding has Cu, Ta and TaN Blanket wafers, and its The results are shown in Table 6, and figure 1 :

[0058] Table 6

[0059]

[0060]

[0061] According to the results in Table 6, it can be seen that the higher the abrasive particle concentration, the higher the copper grinding removal rate, and this phenomenon is more obvious when the abrasive particle size is larger; and when the abrasive particle concentration reaches a certain content, the grinding removal rate will decrease. When reaching a flat area, it will no longer ris...

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Abstract

The invention discloses a grinding composite for planarization metal layer. The grinding composite at least comprises 7,500ppm to less than 5,000ppm by weight of gridding granules, hydrogen peroxide, accelerator, co-corrosion inhibitor and water, wherein the co-corrosion inhibitor comprises a first corrosion inhibitor and a second corrosion inhibitor, and the co-corrosion inhibitor is applied to the planarization metal layer. The composite is capable of maintaining a high grinding removing rate for the metal layer and inhibiting metallic etching; moreover, the composite is capable of reducing gridding deficiencies including dish down, abrasion and the like.

Description

technical field [0001] The invention relates to a polishing composition for flattening a metal layer, and aims to provide a polishing composition for chemical machinery, which can improve the flattening effect of the processed object. Background technique [0002] As the critical dimension (Critical Dimension) of electronic components becomes smaller and the number of wire layers increases rapidly, the resistance / capacitance time delay (RC Time Delay) will seriously affect the operation speed of the overall circuit. In order to improve the time delay and electromigration reliability problems caused by the narrowing of the metal connection line width, copper wire materials with low resistivity and high resistance to electromigration damage are selected to replace aluminum alloy metal. However, since copper metal is not easily etched, another damascene method must be used to form copper metal wires. [0003] The Damascene process is different from the traditional metallizatio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
Inventor 张松源何明彻陆明辉
Owner UWIZ TECH
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