Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for improving graphics critical dimension uniformity in mask

A key dimension and mask technology is applied in the field of semiconductor photolithography to improve the uniformity of key dimensions of mask patterns, and can solve the problems of optimal process condition deviation, difficult process control, and reduction of photolithography process window, etc. To achieve the effect of reducing the difference of etching uniformity, reducing the difference, and increasing the uniformity

Active Publication Date: 2010-11-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, it will shift the optimal process conditions of different local area patterns, reduce the effective process window of lithography, and make process control more difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving graphics critical dimension uniformity in mask
  • Method for improving graphics critical dimension uniformity in mask
  • Method for improving graphics critical dimension uniformity in mask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] The concrete steps of the inventive method are as follows:

[0022] 1. In the photolithography process, before the mask plate is made, use OPC software or other related auxiliary software to insert auxiliary graphics in the layout according to certain rules. The general rule for inserting auxiliary graphics is: add multiple small-sized auxiliary graphics in the area where dummy patterns are not allowed to be inserted in the layout (chip design graphics). The "area where dummy graphics are inserted" usually refers to the dicing line or the open area far away from the working unit of the chip. Dummy graphics are allowed to be inserted, and small-sized auxiliary graphics are added in areas where dummy graphics are not allowed to be inserted to balance the difference in graphic density in different local areas. This small-sized au...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for improving graphics critical dimension uniformity in a mask, which comprises the following steps in the technical process of photoetching: (1) adding a plurality of auxiliary graphics in areas in which virtual graphics are not permitted to be inserted in a domain before manufacturing the mask, thereby balancing difference of the graphics densities in different local areas; (2) manufacturing the mask in accordance with a revised domain which is added with the auxiliary graphics; and (3) forming chip graphics by the exposure of the photoetching technique. The invention can increase the graphic critical dimension in the chip unit on the mask and the uniformity of a section, thereby improving control of critical layers on a high wafer layer.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process method, in particular to a semiconductor photolithography process method, in particular to a method for improving the uniformity of critical dimensions of a mask pattern. Background technique [0002] In the photolithography process, the critical dimension (CD, Critical Dimension, the smallest line width in the mask pattern) and the difference in cross-sectional shape on the mask will directly affect the uniformity control of the key pattern size of the photolithography process. Thereby affecting the realization of the electrical performance of the related chip unit. At the same time, the optimal process conditions of patterns in different local areas will be shifted, reducing the effective process window of lithography, thus making process control more difficult. Such as figure 1 and figure 2 as shown, figure 1 A and figure 1 B are different regions in a chip unit, and the pattern de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/14G03F1/38
Inventor 何伟明魏芳
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com