Hole punching device for carbon dioxide buffer silicon wafer

Abstract

The invention relates to a hole punching device for a carbon dioxide buffer silicon wafer, which comprises a carbon dioxide flow controller, a chlorine triflouride flow controller, a mixer, a reducing valve, a pressure gage, a vacuum pump, a vacuum chamber, a vacuum chamber pressure gage, a sprayer, a masking plate, a silicon water bracket, a vacuum chamber temperature control device, a backward stage pump and a tail gas treating device. The reducing valve, the vacuum pump, the vacuum chamber pressure gage, the vacuum chamber temperature control device, and the backward stage pump are respectively connected with the vacuum chamber. Carbon dioxide gas enters the mixer through the carbon dioxide flow controller and chlorine triflouride gas enters the mixer through the chlorine triflouride flow controller. Carbon dioxide gas and chlorine triflouride gas are mixed in the mixer and the mixed gas enters the vacuum chamber through the reducing valve and the sprayer in sequence and is masked and adjusted by means of beam convergence by the masking plate to punch holes on the silicon wafer on the silicon wafer bracket. The invention has the advantages of simple device, rapid etching speed, good smoothness of the lateral wall and great selection ratio and realizes hole punching for the silicon wafer.

Description

technical field [0001] The invention relates to the technical field of silicon wafer etching in semiconductor technology, in particular to a carbon dioxide buffer silicon wafer drilling device. Background technique [0002] In the MEMS manufacturing process, deep etching of silicon is a commonly used process. The traditional dry etching technology is plasma etching, such as RIE, ICP. Etching is achieved through chemical and physical actions. Plasma chemical etching is isotropic, so line width control is relatively poor. Although physical etching is anisotropic and has a fast etching rate, its selectivity is poor, and the elements removed by bombardment are non-volatile and easily deposited on the surface of the silicon wafer, causing particle contamination. In addition, charges generated by non-uniform plasmas can cause failure of sensitive devices on silicon wafers. Plasma etching equipment is expensive, the etching selectivity is poor, the sidewall smoothness is not hi...

AI Technical Summary

Problems solved by technology

Plasma chemical etching is isotropic, so line width control is relatively poor

Although physical etching is anisotropic and the etching rate is fast, the selectivity is poor, and the elements removed by bombardment are non-volatile, which are easy to deposit on the surface of the silicon wafer, causing particle pollution

In addition, the charge generated by the non-uniform plasma can cause the failure of sensitive devices on the silicon wafer

Plasma etching equipment is expensive, the etching selectivity is poor, the sidewall is not smooth, and it is easy to cause device damage, so it is not suitable for next-generation semiconductor silicon etching

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