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Process using colored mask combined with selective area deposition

A technology of area selection and masking, which is applied in the field of coloring masks, can solve problems such as limited resolution, achieve the effect of reducing the number and omitting the etching process

Inactive Publication Date: 2010-10-20
EASTMAN KODAK CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Additional methods of patterning directed inhibitors such as lithography or inkjet have limited resolution
Also, there are difficulties in positioning the different layers in the final device that cannot be solved by selective area deposition alone

Method used

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  • Process using colored mask combined with selective area deposition
  • Process using colored mask combined with selective area deposition
  • Process using colored mask combined with selective area deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0266] Example 1: Multicolor Mask Formed by Direct Printing Process

[0267] In this example, a multi-color mask containing three filter layers, each color corresponding to an independent functional layer in the thin film transistor device array, was prepared. Convert the gate layer design of the thin film transistor device array into a black and white bitmap file. Convert the semiconductor layer design of the thin film transistor device array into another black and white bitmap file. Convert the source and drain layer design of the TFT device array into a third black and white bitmap file. These bitmaps were then imported into the blue, green and red channels of a single color image file using Photoshop 6.0. In this full-color image, the blue channel contains the gate design as a yellow pattern. The green channel contains the semiconductor layer design as a magenta pattern. The red channel contains the source and drain designs as cyan patterns. This color image was print...

Embodiment 2

[0268] Example 2: Multicolor Mask Formed by Photolithographic Process

[0269] In this example, a multi-color mask containing three filter layers, each color corresponding to an independent functional layer in the thin film transistor device array, was prepared. Chrome-on-glass masks for the gate (CG-1 ), semiconductor and dielectric (CG-2) and source and drain (CG-3) layers of the thin film transistor device array were obtained from Applied Image Incorporated. A 0.7 mm thick borosilicate glass support was cleaned for 10 minutes by treatment with a solution of 70% sulfuric acid and 30% hydrogen peroxide maintained at about 100°C for 10 minutes. After cleaning, the clean glass was spin-coated (at 1000 RPM) with ColorMosaic SC3200L (available from Fujifilm Electronic Materials Co., Ltd.). SC-3200L is a UV curable photoresist containing 3-5% cyan pigment, 7-9% methacrylate derivative copolymer, 7-9% multifunctional acrylate resin and UV photosensitizer.

[0270] The coated gla...

Embodiment 3

[0272] Embodiment 3: blue light curing film preparation

[0273] Coating solution C-1 for the blue light curable film was prepared as follows. A blue-sensitive photoinitiator solution was prepared by adding 0.03 g of photoinitiator A to 3 g of toluene.

[0274] Photoinitiator A:

[0275]

[0276] In a separate vial, 5 grams of polymethyl methacrylate (PMMA) (MW ~ 75K) was dissolved in 45 g of anisole. A solution of 0.95 g of trimethylolpropyl triacrylate and 0.5 g of the photoinitiator A was added to 2.9 g of the resulting PMMA solution.

[0277] Green light curing film preparation:

[0278] Coating solution C-2 for the green light curable film was prepared as follows. A green-sensitive photoinitiator solution was prepared by adding 0.03 g of photoinitiator B to 3 g of anisole. In a separate vial, 5 grams of polymethyl methacrylate (PMMA) (MW ~ 75K) was dissolved in 45 g of anisole. A solution of 0.95 g of trimethylolpropyl triacrylate and 0.5 g of the photoinitiator ...

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Abstract

The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.

Description

technical field [0001] The present invention relates to a color masking method that can be used to form electrical and optical components. Background technique [0002] The manufacture of many electronic components, including flat-panel displays, RFID tags, and various sensing applications, relies on precisely patterning layers of electroactive materials applied to relatively large substrates. These products consist of several layers of differently patterned materials, where it is important that the layers are in a specific registration. The reason for the patterning accuracy is twofold. First, the patterned features must be replicated over large areas of the substrate while possessing precise control over their dimensions. Second, products with these features are usually composed of several distinct but interacting patterned layers, where it is important that these layers be in a specific position or alignment. [0003] Traditionally, the precise layer alignment required...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/20H01L21/77
CPCG03F7/0005H01L27/1214H01L29/7869H01L27/1288H01L29/66765H01L27/1225G03F7/2022H01L27/1292
Inventor L·M·欧文D·C·弗里曼P·J·考德里-科万C·杨D·H·莱维
Owner EASTMAN KODAK CO
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