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Preparation method of bismuth telluride based bulk nano crystalline thermoelectric material

A thermoelectric material, bismuth telluride technology, which is applied in the manufacture/processing of thermoelectric devices, etc., can solve the problems of inability to effectively reduce the sintering temperature, difficult to meet the development of industrialization, and uneven performance of the sintered body, so as to reduce the thermal conductivity of the lattice. , The effect of short sintering time and short cycle

Inactive Publication Date: 2010-07-28
WUHAN UNIV OF SCI & TECH
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  • Abstract
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Problems solved by technology

However, this technology uses molten strips to obtain nano-bismuth telluride powder, and the production process is complicated and the output is low.
In addition, the equipment required for spark plasma sintering is very expensive (for example, a spark plasma sintering furnace with a current of 10,000A costs more than RMB 1 million), and the size of the sintered material is small (the diameter is generally less than 20mm). Difficult to meet the needs of industrial development
"A high-pressure preparation method for bismuth-tellurium alloy series thermoelectric materials" (CN1768986A) patented technology, using hot pressing technology to obtain bismuth telluride-based thermoelectric materials, but the heating method of hot pressing sintering is to heat the entire furnace cavity, through heat Radiation and convective heat transfer heat up the powder material, the heating rate is slow, there is a temperature gradient in the material, the performance of the sintered body is uneven, the energy utilization rate is low, and the production cost is increased
In addition, hot pressing sintering has no activation effect on the powder and cannot effectively reduce the sintering temperature

Method used

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  • Preparation method of bismuth telluride based bulk nano crystalline thermoelectric material

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Embodiment 1

[0029] A method for preparing a bismuth telluride-based bulk nanocrystalline thermoelectric material, the preparation method is as follows:

[0030] Preparation of Bismuth Telluride-Based Alloy Nanopowders by Mechanical Alloying in the First Step

[0031] Using Bi, Sb and Te elemental powders with a mass percentage greater than 99.99% as raw materials, according to (Sb x Bi 1-x ) 2 Te 3 The ingredients of the chemical formula, 0.75≤x≤0.78, are uniformly mixed, and then ball milled with a ball mill to prepare bismuth telluride-based alloy nano powder.

[0032] The technical parameters of the ball milling treatment described in this embodiment are: the mass ratio of balls to materials is 20:1-25:1, the rotational speed of the ball mill is 300-350 r / min, the ball milling time is 30-42 hours, and an inert gas protection is used during ball milling.

[0033] Preparation of Bismuth Telluride-Based Bulk Nanocrystalline Thermoelectric Materials by Microwave Irradiation and Pressur...

Embodiment 2

[0037] A method for preparing a bismuth telluride-based bulk nanocrystalline thermoelectric material. Except following technical parameter, all the other are with embodiment 1:

[0038] Preparation of Bismuth Telluride-Based Alloy Nanopowders by Mechanical Alloying in the First Step

[0039] Press (Sb x Bi 1-x ) 2 Te 3 Chemical formula ingredients, 0.78≤x≤0.80;

[0040] The technological parameters of the ball milling treatment are: the mass ratio of balls to materials is 15:1-20:1, the rotational speed of the ball mill is 350-400r / min, and the ball milling time is 20-30h.

[0041] Preparation of Bismuth Telluride-Based Bulk Nanocrystalline Thermoelectric Materials by Microwave Irradiation and Pressure Sintering in the Second Step

[0042] The temperature is raised to 420-450° C. under the condition that the pressure applied to the powder is 20-25 MPa, and then the temperature is kept for 20-30 minutes under the condition that the pressure applied to the powder is 55-60 ...

Embodiment 3

[0045] A method for preparing a bismuth telluride-based bulk nanocrystalline thermoelectric material. Except following technical parameter, all the other are with embodiment 1:

[0046] Preparation of Bismuth Telluride-Based Alloy Nanopowders by Mechanical Alloying in the First Step

[0047] Press (Sb x Bi 1-x ) 2 Te 3 Chemical formula ingredients, 0.80≤x≤0.82;

[0048] The technological parameters of the ball milling treatment are: the mass ratio of balls to materials is 20:1-25:1, the rotational speed of the ball mill is 450-500r / min, and the ball-milling time is 60-72h.

[0049] Preparation of Bismuth Telluride-Based Bulk Nanocrystalline Thermoelectric Materials by Microwave Irradiation and Pressure Sintering in the Second Step

[0050] The temperature is raised to 350-420° C. under the condition that the pressure applied to the powder is 25-35 MPa, and then the temperature is kept for 45-60 minutes under the condition that the pressure applied to the powder is 38-48 ...

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Abstract

The invention relates to a bismuth telluride based bulk nano crystalline thermoelectric material and preparation method thereof. The technical scheme includes that: firstly simple substance powder with mass percent more than 99.99% is taken as raw material, burdening is carried out according to the chemical formula (SbxBi1-x)2Te3 or Bi2(SeyTe1-y)3, wherein x is more than or equal to 0.75 and less than or equal to 0.85, y is more than or equal to 0.04 and less than or equal to 0.06, mixing to be uniform is carried out, and then ball milling is carried out by a ball mill, thus obtaining bismuth telluride base alloy nano powder; secondly, the bismuth telluride base alloy obtained in the first step is loaded into a graphite mould or ceramic mould to be sintered in a micro wave irradiation pressure sintering device; temperature rises to 300-550 DEG C by heating under the condition that the pressure applied to the powder is 10-40MPa, and then heat preservation is carried out for 10-60min under the condition that the pressure applied to the powder is 30-60MPa, thus obtaining the bismuth telluride based bulk nano crystalline thermoelectric material. The invention has the characteristics of less investment, low production cost, simple technology and short period; and the obtained bismuth telluride based bulk nano crystalline thermoelectric material has high performance.

Description

technical field [0001] The invention belongs to the technical field of nanocrystalline thermoelectric materials. In particular, it relates to a preparation method of a bismuth telluride-based bulk nanocrystal thermoelectric material. Background technique [0002] With the aggravation of energy crisis and environmental pollution, thermoelectric materials, as a new type of energy conversion materials, have received widespread attention from various countries. Thermoelectric materials can realize the direct conversion of thermal energy and electrical energy, and use their Seebeck effect and Peltier effect, which can be applied to thermoelectric power generation and refrigeration. At present, the main reasons restricting the large-scale application of thermoelectric materials are the low thermoelectric conversion efficiency of materials and high production costs. The thermoelectric conversion efficiency of a material mainly depends on the size of its dimensionless thermoelectr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F3/14H01L35/34H10N10/01
Inventor 樊希安李光强鲍思前宋新莉朱诚意薛正良王炜
Owner WUHAN UNIV OF SCI & TECH
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