Low temperature heat-treatment process for eliminating water mist on silicon chip surface

Abstract

The invention relates to a low temperature heat-treatment process for eliminating water mist on a silicon chip surface, which comprises the following steps when treating a single chip: loading a single silicon chip into a furnace chamber, vacuumizing and replacing with nitrogen gas; heating to 100-300 DEG C at a heating rate of 10-30 DEG C / s, keeping at constant temperature, and introducing ozonegas in the constant temperature stage; and cooling to 80 DEG C at a cooling rate of 10-30 DEG C / s, and then taking out the silicon chip. When a plurality of chips are treated, the heating rate and the time of constant temperature are different from that of single chip treatment. The invention has the advantages that the purpose of adding ozone is to oxidize the residual organic substances and soluble ions on the surface with the ozone to obtain a better silicon chip surface; because the concentration of ozone added to the gas atmosphere and the heat treatment temperature are relatively low, the ozone can not affect and oxidize the silicon chip surface, or cause the oxidation film on the silicon chip surface to increase in thickness; and the ozone also can not affect the distribution of thermal donors in the silicon chip, nor affect the change of micro-roughness of the silicon chip surface, thus the silicon chip after the low temperature heat-treatment can be directly used.

Description

technical field [0001] The invention relates to a low-temperature heat treatment process for silicon polished wafers used for integrated circuits, so as to eliminate "water mist" on the surface of the silicon wafers and prevent the silicon wafers from being re-cleaned or even re-polished. Background technique [0002] With the development of microelectronics technology, the characteristic line width of lithography is getting smaller and smaller, and the control of small-diameter particles on the surface of silicon wafers is becoming more and more strict. Surface particles are an important control parameter in the silicon wafer manufacturing process. In order to ensure the surface particles of silicon wafers, silicon wafers must be cleaned and tested in an ultra-clean environment after polishing, and then sealed and packaged. However, during the storage and transportation of silicon wafers, the leakage of the outer packaging or the excessive humidity of the environment before...

AI Technical Summary

Problems solved by technology

However, multiple cleanings generally increase the micro-roughness of the wafer surface

The present invention provides a low-temperature heat treatment process to eliminate the problem of increased surface particles caused by ambient humidity

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