Solid-state image pickup device
一种固体摄像器件、元件的技术,应用在固体图像信号发生器、仪器、光学元件等方向,能够解决图像假色、不能充分得到分辨率信号、得不到分辨率彩色再现图像等问题
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no. 1 Embodiment
[0024] figure 1 It is a diagram showing a schematic configuration of a solid-state imaging device using the CMOS image sensor according to the first embodiment. This solid-state imaging device is constituted by a sensor chip 12, and the sensor chip 12 will pass figure 2 The optical signal condensed by the illustrated optical lens 11 is converted into an electrical signal to output a digital image signal. As will be described in detail later, as the optical lens 11 , a chromatic aberration lens having a characteristic that the focus position differs depending on the wavelength of each band of R (red), G (green), and B (blue) is used. exist figure 2 In , the focal length is represented by FD, and the object distance (distance to the object) is represented by OD.
[0025] figure 1 A circuit configuration of the sensor chip 12 included in the solid-state imaging device is shown. The sensor chip 12 includes a sensor unit 21 , a line memory 22 , a focus adjustment circuit 23 ...
no. 2 Embodiment
[0051] Figure 9 It is a block diagram showing the circuit configuration of the sensor chip 12 used in the solid-state imaging device according to the second embodiment. Also, as the optical lens 11 , a chromatic aberration lens having a characteristic that the focal position differs depending on the wavelength of each band of R (red), G (green), and B (blue) is used similarly to the first embodiment.
[0052] The difference between the sensor chip 12 in the present embodiment and the sensor chip in the first embodiment is that the color arrangement of the color filter of the sensor part 21 is in a basic 4×4 pixel arrangement, and the pixels are arranged in a grid with 8 pixels. , G pixels are arranged with 4 pixels, and R pixels are arranged with 4 pixels. By adopting such a color filter, the output of the R signal is doubled compared with the sensor chip of the first embodiment. As a result, the same high-resolution signal as that of the G pixel is obtained as the contour ...
no. 3 Embodiment
[0064] Figure 13 It is a block diagram showing the circuit configuration of the sensor chip 12 used in the solid-state imaging device according to the third embodiment. Furthermore, as the optical lens 11 , a chromatic aberration lens having the characteristic that the focal position varies with the wavelengths of the R (red), G (green), and B (blue) bands is used similarly to the first embodiment.
[0065] The difference between the sensor chip 12 in this embodiment and the sensor chip in the first embodiment is that the color arrangement of the color filters of the sensor unit 21 is arranged in a basic 2×2 pixel arrangement with two pixels arranged in G pixels and arranged in B pixels. 1 pixel, R pixel is arranged in a general Bayer arrangement of 1 pixel. As the color arrangement of such color filters is changed, a part of the focus adjustment circuit is also changed. That is, in the focus adjustment circuit 23b of this embodiment, the W signal is not input, so the pixel...
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