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A kind of preparation method of binary alternately doped BST film

A technology of alternating doping and thin films, applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of expensive equipment, disparity in the composition of thin films and targets, and high cost, so as to improve the comprehensive dielectric tuning performance, improve the The effect of interface matching relationship

Inactive Publication Date: 2011-12-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the equipment of the first three is relatively expensive, and the deposition rate of radio frequency magnetron sputtering is slow, the composition of the film and the target material are very different, the uniformity of the pulsed laser deposited film is poor, and the metal organic chemical vapor deposition metal organic source is difficult and expensive.
The sol-gel method is cheap and convenient, but the prepared film has serious cracks, poor compactness, and many shrinkage cavities.
Aiming at these limitations, there are many local improvement reports, but it is difficult to find literature reports that can greatly improve the comprehensive dielectric tuning performance of BST thin films

Method used

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  • A kind of preparation method of binary alternately doped BST film
  • A kind of preparation method of binary alternately doped BST film
  • A kind of preparation method of binary alternately doped BST film

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Embodiment 1 prepares Si / SiO 2 Six layers of 1mol% Mn and 1mol% Y alternately doped BST films on / Ti / Pt substrate.

[0046] According to technical scheme described in the present invention in Si / SiO 2 / Ti / Pt substrate prepared six layers of 1mol% Mn and 1mol% Y alternately doped BST thin films, such as figure 2 shown. Wherein, the doping concentration of Mn or Y refers to the percentage doping concentration relative to the molar weight of barium strontium in the BST sol (all the following examples are the same); Odd layers are doped with Mn and pre-crystallized, and even layers are doped with Y and pre-crystallized. crystallize.

[0047] The prepared BST thin film such as figure 2 , where: (a) is a schematic diagram of the film structure, (b) is the AFM morphology of the film, (c) and (d) correspond to the capacitance and dielectric loss of the film at 100kHz, respectively, (e) and (f) Corresponding to capacitance and dielectric loss at 1MHz, respectively.

[00...

Embodiment 2

[0049] Embodiment 2 prepares Si / SiO 2 Six layers of 1mol% Y and 1mol% Mn alternately doped BST films on / Ti / Pt substrate.

[0050] According to technical scheme described in the present invention in Si / SiO 2 Six layers of 1mol% Y and 1mol% Mn alternately doped BST thin films prepared on / Ti / Pt substrate, such as image 3 shown. The odd-numbered layers are doped with Y and pre-crystallized, and the even-numbered layers are doped with Mn and pre-crystallized.

[0051] The prepared BST thin film such as image 3 , where: (a) is a schematic diagram of the film structure, (b) is the AFM morphology of the film, (c) and (d) correspond to the capacitance and dielectric loss of the film at 100kHz, respectively, (e) and (f) Corresponding to capacitance and dielectric loss at 1MHz, respectively.

[0052] Depend on image 3 It can be seen that the surface of the BST film is smooth, dense, and free of cracks, but the grain boundaries are clearer, and the average size of nanocrystal g...

Embodiment 3

[0053] Embodiment 3 prepares Si / SiO 2 Six layers of 1.5mol% Mn and 1.5mol% Y alternately doped BST films on / Ti / Pt substrate.

[0054] According to technical scheme described in the present invention in Si / SiO 2 Six layers of 1.5mol% Mn and 1.5mol% Y alternately doped BST thin films prepared on / Ti / Pt substrate, such as Figure 4 shown. The odd-numbered layers are doped with Mn and pre-crystallized, and the even-numbered layers are doped with Y and pre-crystallized.

[0055] The prepared BST thin film such as Figure 4 , where: (a) is a schematic diagram of the film structure, (b) is the AFM morphology of the film, (c) and (d) correspond to the capacitance and dielectric loss of the film at 100kHz, respectively, (e) and (f) Corresponding to capacitance and dielectric loss at 1MHz, respectively.

[0056] Depend on Figure 4 It can be seen that the surface of the BST thin film is smooth, dense and free of cracks, and the average grain size is about 50nm. At 100kHz: the ca...

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Abstract

The invention discloses a method for preparing a binary alternately doped BST film, which belongs to the technical field of functional materials and relates to a method for preparing a nanocrystalline BST film. The present invention adopts Mn and Y binary doping, that is, Mn or Y doping is performed on the odd-numbered film, and Y or Mn doping is performed on the even-numbered film; at the same time, the "cooling" and "crystallization" steps increase "Pre-crystallization" processing step. The film prepared by the invention is smooth and dense, without cracks and shrinkage cavities, and can greatly improve the comprehensive dielectric tuning performance of the nanocrystalline BST film. The dielectric tuning rate of the obtained nanocrystalline BST film is greater than 30.0%, and the dielectric loss is less than 2.0%. , K factor greater than 15.0, high dielectric strength, stable frequency and temperature characteristics. The nanocrystalline BST film prepared by the present invention can replace ferrite and semiconductor for preparing microwave tuning devices (such as phase shifters), thereby significantly reducing the manufacturing cost of microwave tuning devices; in addition, the prepared nanocrystalline BST of the present invention Thin films can also be used in magnetic recording, pyroelectric focal plane arrays, etc.

Description

technical field [0001] The invention belongs to the technical field of functional materials, and relates to a preparation method of a nanocrystalline barium strontium titanate (BST) thin film. Background technique [0002] BST thin film has a high dielectric tuning rate due to the nonlinear change of dielectric constant with the applied electric field, and has broad application prospects in the field of microwave devices. For example, BST thin-film phase shifters are considered as the best candidates to replace ferrite phase shifters and semiconductor diode phase shifters. However, in order to realize the application of BST films in the microwave field, in addition to high dielectric tunability, low dielectric loss and high stability are required, especially the ratio of high dielectric tunability to dielectric loss, that is, K Factor, because the K factor is an important indicator of BST comprehensive dielectric tuning performance. BST is a typical ABO 3 type perovskite ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00B32B9/04C04B35/465C04B35/22C04B41/52
Inventor 廖家轩贾宇明魏雄邦田忠傅向军张佳
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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