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Neodymium-doped lutetium oxyorthosilicate laser crystal and preparation method thereof

A laser crystal, lutetium silicate technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., to achieve the effect of improving laser efficiency and wide wavelength tuning

Inactive Publication Date: 2010-05-05
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, Ho 3+ , Yb 3+ Rare earth ions such as Lu 2 SiO 5 Crystals have been reported, and effective continuous laser output or pulsed laser output has been obtained, but no Nd 3+ Doped Lu 2 SiO 5 reports about crystals

Method used

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  • Neodymium-doped lutetium oxyorthosilicate laser crystal and preparation method thereof
  • Neodymium-doped lutetium oxyorthosilicate laser crystal and preparation method thereof
  • Neodymium-doped lutetium oxyorthosilicate laser crystal and preparation method thereof

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Effect test

Embodiment 1

[0018] The preparation method of the lutetium silicate laser crystal doped with neodymium in this embodiment comprises the following steps:

[0019] ① Raw material formula:

[0020] The initial raw material is Nd 2 o 3 , Lu 2 o 3 and SiO 2 And according to molecular formula (Nd x Lu 1-x ) 2 SiO 5 The stoichiometric ratio x:(1-x):1 is used for batching, wherein the value range of x is 0.005~0.01;

[0021] 2. The present embodiment selects x=0.005, weighs Nd respectively by stoichiometric ratio x: (1-x): 1 2 o 3 、Lu 2 o 3 and SiO 2 , mixed thoroughly and evenly, pressed into a block on a hydraulic press; put the block into an alumina crucible, put it into a muffle furnace for sintering, and heat it up to 1200°C in 10 hours, keep it warm for 10 hours, and then use it for another 10 hours Cool down to room temperature to form a block, put the block into a crucible, and grow the above-mentioned single crystal by the melt method.

[0022] For the pulling method, the c...

Embodiment 2

[0027] will Nd 2 o 3 , Lu 2 o 3 and SiO 2 High-purity raw materials are weighed according to x=0.008. After mixing evenly, press it into a block on a hydraulic press, put it in an iridium crucible, and use the pulling method to grow the crystal. The seed crystal is Lu in the [100] direction. 2 SiO 5 Single crystal rod, crystal grown on high purity N 2 in the atmosphere. The pulling speed was 1.5 mm / h, and the rotation speed was 8 rpm.

Embodiment 3

[0029] will Nd 2 o 3 , Lu 2 o 3 and SiO 2 High-purity raw materials are weighed according to x=0.01. After mixing evenly, press it into a block on a hydraulic press, put it in an iridium crucible, and use the pulling method to grow the crystal. The seed crystal is Lu in the [100] direction. 2 SiO 5 Single crystal rod, crystal grown on high purity N 2 in the atmosphere. The pulling speed was 2 mm / h, and the rotation speed was 10 rpm.

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Abstract

The invention relates to a neodymium-doped lutetium oxyorthosilicate laser crystal with the luminescent wavelength in a 1-micron wave band and a preparation method thereof. The neodymium-doped lutetium oxyorthosilicate laser crystal the molecular formula of which is (NdxLu1-x)2SiO5 is shorted as Nd:Lu2SiO5, wherein the value of x ranges from 0.005 to 0.01. Nd:Lu2SiO5 monocrystals are grown by adopting a melt method. The crystal can adopt AlGaAs diode pumping to realize 1-micron wave band laser operation.

Description

technical field [0001] The invention relates to a laser crystal, in particular to a neodymium-doped lutetium silicate laser crystal and a preparation method thereof, which is suitable for AlGaAs diode pumping. Background technique [0002] Neodymium-doped laser materials have a four-level system, which is easy to obtain effective laser output. Among them, neodymium-doped crystal materials have good thermal, mechanical and optical properties, and are a good laser gain medium, suitable for 1μm band laser operation. [0003] Lutetium silicate crystals (Lu 2 SiO 5 ) belongs to the monoclinic crystal system, has a low-symmetry crystal structure, twisted double-site characteristics, and provides stronger crystal field and coordination field for dopant ions, which is beneficial to the energy level splitting of dopant ions. In recent years, Ho 3+ , Yb 3+ Rare earth ions such as Lu 2 SiO 5 Crystals have been reported, and effective continuous laser output or pulsed laser output...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/34
Inventor 徐晓东李东振吴锋成诗恕程艳周大华
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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