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Preparation method of copper-zinc-tin-selenium nanoparticles

A nanoparticle, copper-zinc-tin-selenium technology, which is applied in the field of materials and preparations in the field of nano-optoelectronic technology, can solve the problems of expensive equipment and difficulty in large-area deposition, and achieve the effect of avoiding expensive equipment

Inactive Publication Date: 2013-03-27
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Found through literature retrieval to prior art, Kim et al published "Pulsed laser deposition ofquaternary Cu 2 ZnSnSe 4 thin films” (pulsed laser deposition to prepare Cu 2 ZnSnSe 4 Since thin film), professionals have developed pulsed laser deposition, magnetron sputtering, co-evaporation vacuum coating and other Cu 2 ZnSnSe 4 Preparation methods, but these methods have disadvantages such as expensive equipment and difficulty in large-area deposition

Method used

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  • Preparation method of copper-zinc-tin-selenium nanoparticles
  • Preparation method of copper-zinc-tin-selenium nanoparticles
  • Preparation method of copper-zinc-tin-selenium nanoparticles

Examples

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Embodiment 1

[0023] Add 0.25mmol of zinc chloride, 0.25mmol of tin dichloride, 0.5mmol of copper acetylacetonate, and 1mmol of selenium powder into the reaction tube, add 1.25mmol of oleylamine, heat at 100°C for 24 hours, and dissolve the obtained product in ethanol at 8000rpm Centrifuge for 10 minutes, remove the lower layer of precipitate, add chloroform, centrifuge at 7000rpm for 5 minutes, take the supernatant, add 0.1mL oleylamine and 2.5mL of ethanol, centrifuge at 8000rpm for 10 minutes, remove the lower layer of precipitate, evaporate the solvent to obtain copper zinc tin Selenium nanoparticles, the average diameter of copper zinc tin selenium nanoparticles is 5nm, the X-ray diffraction figure of final product is as follows figure 1 .

Embodiment 2

[0025] Add 0.5mmol of zinc sulfate, 0.3mmol of tin acetate, 0.5mmol of cuprous cyanide, and 4.4mmol of selenium powder into the reaction tube, add 15mmol of oleylamine, heat at 350°C for 10 hours, and dissolve the obtained product in 3.8mL of ethylene glycol. Centrifuge at 8000rpm for 10 minutes, remove the lower precipitate, add 2.5mL tetrachlorethylene, centrifuge at 7000rpm for 5 minutes, take the supernatant, add 0.1mL oleylamine and 2.5mL ethylene glycol, centrifuge at 8000rpm for 10min, remove the lower layer, evaporate Obtain copper zinc tin selenium nanoparticles after drying solvent, the average diameter of copper zinc tin selenium nanoparticles is 8nm, the X-ray diffraction figure of final product is as follows figure 2 .

Embodiment 3

[0027] Add 0.3mmol of zinc acetate, 0.28mmol of tin bromide acetylacetonate, 0.5mmol of cuprous chloride, and 1.5mmol of selenium powder into the reaction tube, add 15mmol of oleylamine, heat at 500°C for 1 hour, and dissolve the obtained product in 2.85mL of ethyl alcohol. Diol, centrifuge at 8000rpm for 10 minutes, remove the lower layer of precipitate, add 2.5mL of n-hexane, centrifuge at 7000rpm for 5 minutes, take the supernatant, add 0.1mL oleylamine and 2.5mL of ethylene glycol, centrifuge at 8000rpm for 10 cuprous chloride After taking off the lower layer of precipitation, evaporate the solvent to obtain copper zinc tin selenium nanoparticles, the average diameter of the copper zinc tin selenium nanoparticles is 9nm, and the X-ray diffraction pattern of the final product is as follows: image 3 .

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Abstract

The invention relates to a preparation method of copper-zinc-tin-selenium nanoparticles, belonging to the nanometer optoelectronic technical field. The method comprises the following steps: mixing zinc (II) salt, tin (II or IV) salt, copper (I or II) salt and selenium power, adding oleamide; performing heating treatment, dissolving the materials in initial extracted solvent, centrifuging to take lower precipitate; then adding second extracted solvent in the lower precipitate, centrifuging twice to take supernate, finally adding oleamide and initial extracted solvent again in supernate, centrifuging three times to take precipitate, and drying precipitate to obtain the copper-zinc-tin-selenium nanoparticles. The method of the invention is green and non-pollution, has low cost and is suitable for mass production.

Description

technical field [0001] The invention relates to a material in the field of nano-photoelectric technology and a preparation method thereof, in particular to a preparation method of copper-zinc-tin-selenium nanoparticles. Background technique [0002] Copper Zinc Tin Selenium (Cu 2 ZnSnSe 4 , the English abbreviation is CZTSe) the bandgap width is very close to the optimal bandgap width required by semiconductor solar cells, and the material is to replace copper indium gallium selenide (Cu 2 InGaSe 2 , English abbreviation is CIGS), the indium and gallium elements in CIGS do not contain toxic components and are environmentally friendly. [0003] Found through literature retrieval to prior art, Kim et al published "Pulsed laser deposition ofquaternary Cu 2 ZnSnSe 4 thin films” (pulsed laser deposition to prepare Cu 2 ZnSnSe 4 Since thin film), professionals have developed pulsed laser deposition, magnetron sputtering, co-evaporation vacuum coating and other Cu 2 ZnSnSe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00H01L31/18
CPCY02P70/521Y02P70/50
Inventor 魏浩郭炜张亚非孙怡婧周志华
Owner SHANGHAI JIAOTONG UNIV
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