Device and process method for filling aluminum into nano through holes by using PVD method
A process method and nano-scale technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of high production equipment requirements, imperfect technical nodes, difficult to fill aluminum technology extension, etc., and it is not easy to achieve Breakdown, improve equipment utilization, reduce the effect of water and electricity consumption
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[0056] The present invention is described in detail below with reference to the accompanying drawings, but they do not limit the present invention in any way.
[0057] As shown in the figure, 1 is an insulator, 2 is a barrier layer, 3 is a seed layer, and 4 is aluminum.
[0058] 11 is a wafer, 22 is a target material, 33 is a magnet, 44 is a DC power supply, 55 is a wafer base, 66 is a radio frequency power supply (I), and 77 is a radio frequency power supply (II).
[0059] The device of the present invention mainly includes: a PVD chamber, a DC power supply 44, a magnet 33, a wafer base 55, a target 22, the target 22 is placed on the top of the PVD chamber, the wafer base 55 is placed on the bottom of the PVD chamber, and Opposite to the wafer base 55, a radio frequency power source (I) 66 is added to the target 22, and a radio frequency power source (II) 77 is added to the wafer (silicon chip). See Figure 7 .
[0060] The present invention provides a nano-scale through-h...
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