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High-thermal conductivity electronic packaging material and preparation method thereof

An electronic packaging material and high thermal conductivity technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of low application value and small size, achieve high thermal conductivity, high efficiency, and reduce interface heat The effect of resistance

Active Publication Date: 2012-09-26
BEIJING AVIATION MATERIAL INST NO 1 GRP CORP CHINA AVIATION IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Russia's Ekimov et al. used high temperature and high pressure methods to prepare diamond / copper composite materials with thermal conductivity up to 900W / m·K, but the volume that can be obtained is small and the application value is not great.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Raw materials: diamond particles with a particle size of 140 μm, silicon carbide particles with a particle size of 30 μm, pure copper powder, and molybdenum powder with a volume ratio of 25:25:47:3.

[0018] Mix the powders in the above ratio evenly, put them into the reduction furnace and reduce them with hydrogen for 2 hours. After the temperature is 200°C, put them into graphite molds and carry out discharge plasma sintering. The process is: heating to 700°C at a heating rate of 50°C / min ℃, and pressurized at 50MPa, after reaching the sintering temperature, keep it warm for 3 minutes, and take it out to demould after cooling with the furnace. The thermal conductivity of the obtained material is 370W / m·K, and the coefficient of thermal expansion is 8.2×10 -6 / K.

Embodiment 2

[0020] Raw materials: diamond particles with a particle size of 320 μm, pure copper powder, and molybdenum powder with a volume ratio of 50:48:2.

[0021] Mix the powders in the above proportions evenly, put them into the reduction furnace and reduce them with hydrogen for 1 hour. After the temperature is 300°C, put them into graphite molds and carry out discharge plasma sintering. ℃, and pressurize 30MPa, keep warm for 10 minutes after reaching the sintering temperature, take out the mold after cooling with the furnace. The thermal conductivity of the obtained material is 550W / m·K, and the coefficient of thermal expansion is 6.7×10 -6 / K.

Embodiment 3

[0023] Raw materials: diamond particles with a particle size of 20 μm, pure copper powder, and tungsten powder in a volume ratio of 60:30:10.

[0024] Mix the above-mentioned powders evenly, put them in a reduction furnace and reduce them with hydrogen for 5 hours. After the temperature is 400°C, put them into a graphite mold and carry out discharge plasma sintering. ℃, and pressurize 35MPa, keep it warm for 1 minute after reaching the sintering temperature, take it out and demould after cooling with the furnace. The thermal conductivity of the obtained material is 480W / m·K, and the thermal expansion coefficient is 5.8×10 -6 / K.

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Abstract

The invention belongs to the technical field of electronic packaging materials, and provides a high-thermal conductivity electronic packaging material and a preparation method thereof. The packaging material comprises a reinforcement body comprising diamond grains, pure copper powder and a third component, namely chromium, molybdenum, silicon, titanium or tungsten, wherein the volume percentage of the reinforcement body is 25 to 80 percent and that of the third component is 0.01 to 10 percent. The preparation method comprises the following steps: mixing the reinforcement body, the pure copperpowder and the third component evenly in proportion, and reducing the mixture by hydrogen in a reducing furnace for 1 to 5 hours, at a temperature between 200 and 400 DEG C; feeding the mixed powder in a graphite die and treating the mixed powder by adopting a spark plasma sintering process; vacuumizing the graphite die, heating up the graphite die to between 700 and 1,100 DEG C at a rate of temperature increase of 50 to 200 DEG C / min and pressurizing the graphite die to between 20 and 50MPa; and carrying out heat preservation for 1 to 20 minutes when reaching a sintering temperature and thentaking the packaging material out for demoulding after furnace cooling.

Description

technical field [0001] The invention belongs to the technical field of electronic packaging materials and provides a high thermal conductivity electronic packaging material and a preparation method thereof. Background technique [0002] With the continuous development of electronic technology, the degree of integration of electronic components is getting higher and higher, and the heat generation is also increasing. Microprocessors and power semiconductor devices often cannot work normally due to high temperature in the application process. Heat dissipation problems It has become one of the main technical bottlenecks facing the development of the electronic information industry. Traditional electronic packaging materials mainly include: Al, Cu, Kovar alloy, Invar alloy, W / Cu alloy, Mo / Cu alloy, etc. The thermal expansion coefficient of Al and Cu is too large, which does not match the ceramic substrate; the thermal conductivity of Kovar alloy and Invar alloy is too low, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/29H01L23/373H01L21/48
Inventor 刘永正崔岩
Owner BEIJING AVIATION MATERIAL INST NO 1 GRP CORP CHINA AVIATION IND
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