Forming methods of silicon nitride film and MIM capacitor
A silicon nitride film and capacitor technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc., can solve the problems of limited improvement of capacitor electrical characteristics and complicated methods, and achieve improved electrical thickness uniformity and electrical uniformity The effects of improved performance and improved leakage current
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no. 1 example
[0074] The first embodiment of the present invention introduces a new method for forming a silicon nitride film, figure 2 It is a flow chart of the method for forming a silicon nitride film in the first embodiment of the present invention, combined below figure 2 The first embodiment of the present invention will be described in detail.
[0075] Step 201: providing a substrate.
[0076] The substrate provided in this embodiment may be a simple silicon substrate, or a silicon substrate on which metal oxide semiconductor transistors have been formed, or a substrate on which an underlying metal wiring structure has been formed.
[0077] Step 202: Deposit a silicon nitride film on the substrate.
[0078] In this embodiment, in order to reduce the thermal budget in the manufacturing process, the deposition process in this step adopts the plasma enhanced chemical vapor deposition method (PECVD, Plasma Enhanced Chemical Vapor Deposition), using silane (SiH 4 ) and ammonia (NH 3...
no. 2 example
[0089] The second embodiment of the present invention introduces a new method for forming a MIM capacitor, image 3 It is a flowchart of a method for forming a MIM capacitor according to the second embodiment of the present invention, Figure 4 to Figure 8 In order to illustrate the cross-sectional view of the device of the MIM capacitance forming method of the second embodiment of the present invention, below in conjunction with Figure 3 to Figure 8 The second embodiment of the present invention will be described in detail.
[0090] Step 301: Provide a substrate.
[0091] The substrate provided in this embodiment may be a silicon substrate on which a metal oxide semiconductor transistor has been formed, or a substrate on which an underlying metal wiring structure has been formed.
[0092] In other embodiments of the present invention, semiconductor substrates of other materials may also be used, such as germanium substrates, gallium arsenide substrates, and the like.
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