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Method and system for detecting consumption of photoresist and data classification and acquisition system

A detection method and detection system technology, which is applied in the program control of sequence/logic controller, photoplate-making process coating equipment, electrical program control, etc., can solve the problem of real-time detection of the actual consumption of raw materials and the inability to know the photoresist Problems such as actual consumption and inability to know the consumption value of raw materials to achieve the effects of reducing blindness, facilitating production management, and reducing waste

Inactive Publication Date: 2009-11-04
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Abstract
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AI Technical Summary

Problems solved by technology

However, the actual amount of photoresist used cannot be known by using the spin-coating device described above, and the future amount cannot be estimated based on the actual amount.
[0012] In other processes of the semiconductor manufacturing process, the same problem may also exist. The actual consumption value of raw materials cannot be known through existing manufacturing equipment, and the actual consumption of raw materials cannot be detected in real time.

Method used

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  • Method and system for detecting consumption of photoresist and data classification and acquisition system
  • Method and system for detecting consumption of photoresist and data classification and acquisition system
  • Method and system for detecting consumption of photoresist and data classification and acquisition system

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Embodiment Construction

[0066] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0067] The invention provides a method for detecting the amount of photoresist. figure 2 It is a flowchart of an embodiment of the method for detecting the amount of photoresist used in the present invention.

[0068] Please refer to figure 2 , step S100 is to collect the current information of photoresist spraying on the production line; wherein the current information at least includes photoresist name, spraying capacity value and spraying time.

[0069] Step S110 is to judge the characteristics of the current spraying according to the current information.

[0070] Step S120 is to acquire the historical information of the photoresist with the same characteristics as the current spraying.

[0071] Step S130 is to calculate the sum of the spraying capacity value in the current information and the spraying capacity value in the histori...

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Abstract

The invention relates to a method for detecting the consumption of photoresist, which comprises the following steps: acquiring current information of spraying of the photoresist on a production line; judging the characteristic of current spraying according to the current information; acquiring historical information which has the same characteristic with current spraying; and summing the spraying capacity value in the current information and the spraying capacity value in the historical information, and acquiring a novel spraying capacity value, wherein both the current information and the historical information at least comprise the name of the photoresist, the spraying capacity value and the spraying time. The invention also provides a system for detecting the consumption of the photoresist and a system for classifying and acquiring data information. The invention can classify and acquire the actual consumption of the photoresist so as to be convenient to detect the actual consumption of the photoresist on the production line.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photoresist consumption detection method and system, and a data classification and acquisition system. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, a photoresist pattern is formed on a semiconductor wafer through a photolithography process, and the photoresist pattern is used as a mask protection layer to perform subsequent etching or ion implantation processes. [0003] The general steps of the photolithography process are as follows: first, a photoresist layer is formed on the semiconductor wafer by a photoresist spin coating device; The photoresist layer is exposed, and the pattern on the mask plate is transferred to the photoresist layer; then, the semiconductor wafer that has been subjected to the exposure process is placed in a developing device for development to form a photoresist pattern. [0004]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16G05B19/04
Inventor 杨光宇
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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