Process for manufacturing amorphous silicon thin film solar cell

Abstract

The invention relates to a process for manufacturing an amorphous silicon thin film solar cell, which belongs to the field of semiconductors. The process comprises the following steps: (a) preparing a p-type silicon-carbon film; (b) preparing a buffer layer; (c) preparing an intrinsic layer; and (d) preparing an n layer. In the preparation of each layer, the band gap width, the a P layer with high conductivity and an interface with low defect concentration are obtained by controlling the dilution ratio of H2 and other process parameters, thus the conversion efficiency of the cell is greatly improved, and the attenuating effect of the cell is reduced.

Description

1. Technical field [0001] The invention relates to a manufacturing process of a solar cell, in particular to a manufacturing process of an amorphous silicon thin film solar cell, and belongs to the field of semiconductors. 2. Background technology [0002] The demand for energy in the world has led to the rapid development of solar cell technology. At present, the mature and mainstream technologies in the market are mainly monocrystalline silicon and polycrystalline silicon solar cells, but due to the cost limit caused by the shortage of silicon materials and the environment in the process of producing crystalline The problem is that amorphous silicon thin-film solar cells have the advantages of less consumables, environmental friendliness, and greater room for cost reduction. Scientific research and production units have taken amorphous silicon solar cells as the main direction of research and development. [0003] The structure of amorphous silicon solar cells is mainly p-...

AI Technical Summary

Problems solved by technology

Most amorphous silicon thin film solar cells use p-type amorphous silicon carbon (p-a-SiC:H) as the window layer, and its conductivity is relatively low (about 10 -5 S / cm level); there is a lattice mismatch problem at the p / i heterojunction interface, which causes the increase of interface defect states and increases the recombination of carriers

In addition, the light-induced degradation (S-W) effect of amorphous silicon materials makes the performance of amorphous silicon solar cells unstable and reduces the photoelectric conversion efficiency of amorphous silicon thin film cells.