InP base plane type back incident avalanche optoelectronic diode and manufacturing method thereof

Abstract

The invention relates to an InP base plane type back incident avalanche optoelectronic diode which comprises a substrate, a buffer layer manufactured on the substrate, an absorption layer manufactured on the buffer layer, a transition layer manufactured on the absorption layer, an electric field control layer manufactured on the transition layer and an avalanche multiplication layer manufactured on the electric field control layer, wherein a concave part is disposed on a central area on the avalanche multiplication layer, and the edge of the concave part is of an inverse step-shaped structure; a floating protective ring is manufactured at the outside of the concave part on the avalanche multiplication layer; the concave part comprises a P-type doped layer disposed on the bottom surface of the concave part and a passivation protecting layer disposed on the surfaces of the P-type doped layer and the avalanche multiplication layer, wherein a contact through hole is disposed in the center of the passivation protecting layer, and a P electrode is manufactured at the bottom in the middle of the passivation protecting layer; and an n electrode is manufactured on the back of the substrate, and a light incident window is disposed in the middle of the n electrode.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to an InP-based planar back-incidence avalanche photodiode and a manufacturing method thereof. Background technique [0002] As an important photodetector element, avalanche photodiodes have been widely used in communication, radar, biomolecular luminescence detection and single photon detection in the laboratory. From the perspective of device structure and manufacturing process, avalanche photodiodes can be divided into mesa structure and planar structure. For the avalanche photodiode with mesa structure, each doped layer is generated by deposition, and all parts in the passivation layer are active regions; for the avalanche photodiode with planar structure, the doping of the front active region is Formed by thermal diffusion or ion implantation, there is a large undoped intrinsic region around the active region. Since the avalanche photodiode with the mesa structure has the insurmounta...

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Problems solved by technology

However, it is more difficult to achieve this for the thermal diffusion process, so it is not easy to manufacture planar avalanche photodiodes with good uniformity through the thermal diffusion-based process flow

In addition, suppressing the edge breakdown phenomenon of planar avalanche photodiodes is a very important issue, although measures such as guard rings are adopted in the traditional method, the edge breakdown phenomenon still exists to a large extent

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