Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Production method for inner transparent collecting electrode IGBT with polysilicon as service life control layer

A technology for life control and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve problems such as no manufacturing method is given

Inactive Publication Date: 2009-08-05
BEIJING UNIV OF TECH
View PDF0 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the above-mentioned papers describing the concept and structure of the inner transparent collector IGBT, no clear and specific manufacturing method is given.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production method for inner transparent collecting electrode IGBT with polysilicon as service life control layer
  • Production method for inner transparent collecting electrode IGBT with polysilicon as service life control layer
  • Production method for inner transparent collecting electrode IGBT with polysilicon as service life control layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] What is manufactured in this embodiment is a 600V plane gate transparent collector IGBT silicon device. According to manufacture method and step of the present invention (see figure 2 ) step by step, you can manufacture such as figure 1 The final structure shown. The specific process and its key parameters are as follows.

[0057] In the first step, the boron doping concentration is selected to be 7.5×10 18 cm -3 , p with a thickness of 500-600 μm + Monocrystalline silicon substrate 20, and a layer of undoped polycrystalline silicon layer 3 is grown on the upper surface by silane thermal decomposition LPCVD method, the growth temperature is 625°C, and the thickness is controlled at about 1 μm. see figure 2 (a).

[0058] The second step, such as figure 2 As shown in (b), another choice of phosphorus doping concentration is 7×10 13 cm -3 the n - Silicon single wafer 60, the n - A thin layer of SiO is thermally grown on the lower surface 51 of the wafer 2 S...

Embodiment 2

[0066] What is manufactured in this embodiment is a 600V trench-gate transparent collector IGBT silicon device. The manufacturing steps and related material parameters and process parameters are basically the same as those in Embodiment 1, except that the planar gate process is changed to the current common trench gate process when implementing step 5 to manufacture a power MOS structure. The resulting structure can be found in Figure 4 .

[0067] What is produced is a 600V trench gate internal transparent collector IGBT with good performance, which does not require ultra-thin sheet processing, and has a positive temperature coefficient of on-state voltage (two I at room temperature and high temperature) C -V CEsat The current at the intersection point of the conduction characteristic curve is lower than half of the rated current). When the cell shape, size and density of the surface power MOS structure are the same or similar, the internal transparent collector IGBT can o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for manufacturing an inner transparent collector IGBT which uses polysilicon as a lifetime control layer belongs to the field of semiconductor devices. The invention uses the polysilicon layer as a local current carrier lifetime control layer and a direct wafer bonding process for linking a substrate with an active region, then manufactures a class power MOS structure on the surface, and finally manufactures an IGBT with an inner transparent collector; the invention is a feasible and practical manufacturing method. More importantly, the invention not only can avoid extremely difficult ultra-thin film processing and improve the yield aiming at the silicon material IGBT with the voltage endurance lower than 1200V, but also can obtain the positive temperature coefficient of on-state voltage and a better comprehensive property trade-off curve. In addition, the manufacturing method and the technical idea of the invention are also applicable to other semiconductor materials.

Description

Technical field: [0001] The invention relates to a manufacturing method of a semiconductor device, more specifically to a manufacturing method of a power semiconductor switching device. Background technique: [0002] The invention of the insulated gate bipolar transistor (IGBT) has brought about a revolution in power electronics technology, opened the high-frequency era of power electronics technology, and made great contributions to saving energy, saving materials, and reducing the volume and weight of power electronics equipment. . After nearly 30 years of development, the comprehensive performance of IGBT has continued to improve. One of the important ways to characterize the comprehensive performance improvement of different IGBT products is to depict the on-state voltage V representing the static power consumption of the device CEsat and the shutdown energy consumption E representing the dynamic power dissipation off the compromise curve between. Among the compromis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331
Inventor 吴郁亢宝位贾云鹏胡冬青
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com