Preparation of inorganic silicon dioxide nano template

A silicon dioxide and nanotechnology, applied in the field of nano-template preparation, can solve the problems of low surface energy of PDMS and the influence of micro-region structure regularity, etc., and achieve the effect of avoiding the difficulty of peeling, eliminating the need for processing procedures, and good thermal stability

Inactive Publication Date: 2009-07-08
SICHUAN UNIV
View PDF6 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the surface energy of PDMS is extremely low (19.9mN / m), it is preferentially spread on the surface of the film. The structural regularity of the area has a greater impact

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation of inorganic silicon dioxide nano template
  • Preparation of inorganic silicon dioxide nano template
  • Preparation of inorganic silicon dioxide nano template

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The PS-PDMS block copolymer (the number-average molecular weight is 15000, PDMS weight fraction 10%) that is dissolved in toluene and is 0.2% by weight percent concentration, obtains the macromolecular solution of homogeneous dispersion with ultrasonic treatment at room temperature for 0.5 hour; After the solution is filtered, the block copolymer solution is spin-coated on the silicon wafer substrate at a rotation speed of 1000 rpm by spin coating method at room temperature, and the residual solvent in the film is vaporized at room temperature to obtain a film with a thickness of 20 nm. ; The film was heat-treated at 140 °C for 12 hours in a nitrogen atmosphere to cause microphase separation of PS and PDMS; finally, UV-O 3 (The wavelength of ultraviolet light is 185 nanometers and 254 nanometers) under the synergistic effect for 5 minutes, the PS phase is etched, and the regularly arranged PDMS phase is oxidized to inorganic SiO 2 Mutually.

Embodiment 2

[0036] The PMMA-PDMS block copolymer (the number-average molecular weight is 20000, PDMS weight fraction 15%) that is dissolved in toluene and is 0.5% by weight percent concentration, obtains the macromolecule solution of homogeneous dispersion with ultrasonic treatment 1 hour at normal temperature; After the solution is filtered, the block copolymer solution is spin-coated on a silicon wafer substrate at a rotation speed of 1000 rpm by spin coating method at room temperature, and the residual solvent in the film is vaporized at room temperature to obtain a film with a thickness of 35 nm. ; The film was heat-treated at 170 ° C for 18 hours in a nitrogen atmosphere to cause microphase separation of PMMA and PDMS; finally, the oxygen plasma was treated for 20 seconds to etch the PMMA phase, and at the same time the regularly arranged PDMS phase was oxidized to inorganic SiO 2 Mutually.

Embodiment 3

[0038] The PS-PDMS block copolymer (the number-average molecular weight is 35000, PDMS weight fraction 19%) that is dissolved in toluene and the weight percent concentration is 1%, obtains the macromolecular solution of homogeneous dispersion with ultrasonic treatment at room temperature for 1.5 hours; After the solution is filtered, the block copolymer solution is spin-coated on the silicon wafer substrate at a rotation speed of 5000 rpm by spin coating method at room temperature, and the residual solvent in the film is vaporized at room temperature to obtain a film with a thickness of 25 nm. ; The film was heat-treated at 200 °C for 24 hours in a nitrogen atmosphere to cause microphase separation of PS and PDMS; finally, UV-O 3 (The wavelength of ultraviolet light is 185 nanometers and 254 nanometers) under the synergistic effect for 10 minutes, the PS phase is etched, and the regularly arranged PDMS phase is oxidized to inorganic SiO 2 Mutually. The resulting inorganic sil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
molecular weight distributionaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing an inorganic silica nanometer template. The method comprises that: a block copolymer containing polydimethylsiloxane is dissolved in an organic solvent, subjected to ultrasonic treatment, forms a film by a rotary film coating method or a pulling method, is subjected to heat treatment for 2 to 48 hours at a temperature of between 110 and 250 DEG C in nitrogen atmosphere or vacuum environment, or is treated by saturated solvent steam for 5 minutes to 48 hours at room temperature, and is treated for 1 to 60 minutes at room temperature in ultraviolet-ozone environment ,or is treated for 5 to 60 seconds by oxygen plasma to form the inorganic silica nanometer template with a regular nanometer structure. The method can simplify process flow and improve production efficiency, and can also avoid the problems of difficult peeling, pollution, and the like caused by the introduction of other metal elements. The inorganic SiO2 nanometer template prepared by the method has strong capacity for anti-etching, is compatible with CMOS, and can obtain a SiO2 lattice structure or a strip structure, wherein the distance between SiO2 particles is between 20 and 100 nanometers; the diameter of the SiO2 particle is between 10 and 50 nanometers; and the SiO2 particles are in regular arrangement.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanometer templates, and in particular relates to a preparation method of inorganic silicon dioxide nanometer templates. Background technique [0002] As the integration level of integrated circuits becomes higher and higher, the size of required devices and the minimum line width requirements of integrated circuits become smaller and smaller. How to quickly and cheaply prepare nanodevices with specific structures has always been a hot issue in the field of micro-nano manufacturing. Traditionally, top-down (top-down) methods, such as various photolithography techniques, are mainly used to prepare micro-nano structure devices. However, these methods usually require expensive equipment or a long processing time, and, due to the limitation of the processing principle of photolithography technology, it has been generally considered to be close to its limit. Although the use of a light source ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/12
Inventor 陈枫傅强王琦杨静晖
Owner SICHUAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap