Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing stannic oxide nano wire

A tin dioxide and nanowire technology, applied in the direction of tin oxide, etc., can solve the problems of complex post-treatment process, small output limitation of tin dioxide, etc., achieving good crystallinity, easy industrialized continuous production, uniform structure and size controllable Effect

Inactive Publication Date: 2009-06-17
EAST CHINA UNIV OF SCI & TECH
View PDF0 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the synthesis methods of tin dioxide with nanowire structure mainly include hydrothermal method, thermal deposition method, molten salt method, etc. Although the above methods have the advantages of simple operation and strong controllability, the complex post-treatment process and small Yield greatly limits continuous scale-up production of tin dioxide nanowires

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing stannic oxide nano wire
  • Method for preparing stannic oxide nano wire
  • Method for preparing stannic oxide nano wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] The flow chart of the continuous large-scale preparation method of tin dioxide nanowires is as follows figure 1 As shown, use a syringe to slowly drop 10ml tin tetrachloride into 100ml ethanol to form a precursor solution. 3 / h Air is mixed, and the mixed steam forms a flat flame at the burner mouth. The porous cordierite substrate (which can also be a substrate of stainless steel or an inert ceramic material) is placed in parallel on the burner plate, deposited for 100 min, and the reaction temperature is 800°C. In order to prevent condensation during the transmission of mixed steam, the evaporator and transmission pipes are all kept at a constant temperature of 200°C. The obtained sample has a length of about 4 μm, a diameter of 40 nm, an aspect ratio of 100, and a relatively uniform size. The electron microscope photos are as follows: figure 2 shown.

Embodiment 2

[0019] The flow chart of the continuous large-scale preparation method of tin dioxide nanowires is as follows figure 1 As shown, use a syringe to slowly drop 7ml of tin tetrachloride into 100ml of ethanol to form a precursor solution. 3 / h Air is mixed, and the mixed steam forms a flat flame at the burner mouth. The porous cordierite substrate (which can also be a substrate of stainless steel or inert ceramic material) is placed in parallel on the burner plate and deposited for 10 minutes. As the deposition time prolongs, the length of the nanowires will become longer. The reaction temperature is 700°C. In order to prevent condensation during the transmission of mixed steam, the evaporator and transmission pipes are all kept at a constant temperature of 200°C. The length of the obtained sample is 1.5 μm, the diameter is about 20 nm, the aspect ratio reaches 75, and the size is relatively uniform. The electron microscope photos are as follows: image 3 shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Diameteraaaaaaaaaa
Lengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing tin dioxide nano wires, which mainly adopts a flame precipitation method for preparation. The method comprises the following steps: uniformly mixing tin tetrachloride and ethanol, adding the mixture into an evaporator for gasification through an injection pump, and making the mixture uniformly mixed with the air and enter a combustion nozzle to form flat flame, wherein a porous substrate is arranged above the flame; and making tin dioxide generated by hydrolysis undergo gaseous phase deposition on the substrate to form a nano-wire structure. By adoption of the method to prepare the tin dioxide with the nano-wire structure, the dimension of the wires can be precisely controlled by adjusting the precipitation time, and the operation is simple and the period is short. Moreover, the method can realize large-scale preparation by enlarging area of the flat flame and continuous motion of the substrate, and is easy to realize industrial continuous production.

Description

technical field [0001] The invention relates to a method for preparing tin dioxide nanowires, in particular to preparing tin dioxide nanowires by means of a flat flame deposition method. Background technique [0002] Tin dioxide is a typical semiconductor metal oxide with a band gap of 3.6eV (300K). Its thin film has been widely used in the fields of gas sensors, thin film resistors, electrothermal conversion layers, solar cells, transparent electrodes, etc. . One-dimensional or two-dimensional nanostructures such as tin dioxide nanowires and nanobelts have a high specific surface area due to their small size in two dimensions to the nanometer level, and their chemical adsorption and catalytic capabilities are significantly enhanced. , at the same time, its energy band structure has more novel characteristics than its bulk materials, and it has more excellent performance than its bulk materials and thin film materials. Therefore, the preparation and physical properties of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G19/02
Inventor 胡彦杰刘杰李春忠姜海波
Owner EAST CHINA UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com