Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Production process for golden electrode for LED

A technology of light emitting diodes and gold electrodes is applied in the field of preparation of light emitting diode gold electrodes to achieve the effects of no pinhole cracks, stable storage and bright surface.

Inactive Publication Date: 2009-04-29
ZHEJIANG INVENLUX TECH
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] If the chemical reduction gold plating process can be applied to the preparation of gold electrodes for light-emitting diodes, it will be able to solve the current problems in the preparation of gold electrodes for light-emitting diodes, and there is no relevant report yet.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production process for golden electrode for LED
  • Production process for golden electrode for LED
  • Production process for golden electrode for LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Such as figure 1 As shown, the preparation method of the light-emitting diode gold electrode of the present embodiment 1 comprises the following steps:

[0042] (1) epitaxially growing N-type layer 2, active layer 3, and P-type layer 1 on sapphire substrate 1; etching N-type layer 2 with a plasma etching machine, and vapor-depositing P-type layer transparent conductive layer 5; Transfer the pattern of the P and N electrode masks to the photoresist 7 on the chip surface by photolithography, such as figure 2 shown;

[0043] (2) On the transparent electrode layer 5, the N-type layer 2, the metal layer with ohmic contact and a layer of gold 8 with a thickness of 300 angstroms are evaporated successively, as image 3 Shown; remove excess photoresist and metal by Lift-off, then clean the wafer with acetone and isopropanone ultrasonic vibration to remove residual photoresist and organic matter;

[0044] (3) Under the conditions of 5g / L of gold sodium sulfite (calculated as...

Embodiment 2

[0048] Such as figure 1 As shown, the preparation method of the light-emitting diode gold electrode of the present embodiment 2 comprises the following steps:

[0049] (1) epitaxially growing N-type layer 2, active layer 3, and P-type layer 1 on sapphire substrate 1; etching N-type layer 2 with a plasma etching machine, and vapor-depositing P-type layer transparent conductive layer 5; Transfer the pattern of the P and N electrode masks to the photoresist 7 on the chip surface by photolithography, such as figure 2 shown;

[0050] (2) On the transparent electrode layer 5, the N-type layer 2, the metal layer with ohmic contact and a layer of gold 8 with a thickness of 500 angstroms are evaporated successively, as image 3Shown; remove excess photoresist and metal by Lift-off, then clean the wafer with acetone and isopropanone ultrasonic vibration to remove residual photoresist and organic matter;

[0051] (3) Under the conditions of 5 g / L of sodium gold sulfite (calculated as...

Embodiment 3

[0055] Such as figure 1 As shown, the preparation method of the light-emitting diode gold electrode of the present embodiment 3 comprises the following steps:

[0056] (1) epitaxially grow N-type layer 2, active layer 3, and P-type layer 4 on sapphire substrate 1; etch out N-type layer 2 with a plasma etching machine, and vapor-deposit P-type layer transparent conductive layer 5 and Silicon dioxide protective layer 6; transfer the image of the P and N electrode mask plates to the photoresist 7 on the chip surface by photolithography, and etch and remove the silicon dioxide at the electrode position, such as Figure 5 shown;

[0057] (2) On the transparent electrode layer 5, the N-type layer 2, the metal layer with ohmic contact and a layer of gold 8 with a thickness of 400 angstroms are evaporated successively, as Figure 6 Shown; remove excess photoresist and metal by Lift-off, then clean the wafer with acetone and isopropanone ultrasonic vibration to remove residual photor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
hardnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a light-emitting diode gold electrode preparation method, which comprises the following steps: firstly, an ohmic-contact metal layer and a thin gold layer undergo vapour-deposition successively, and then the chemical reduction gold plating is adopted to precipitate a gold layer with a required thickness on the surface of the thin gold layer undergoing the vapour-deposition, so that the preparation of the light-emitting diode gold electrode is completed. The method adopts the chemical reduction gold plating method to prepare the gold electrode, so as to save significantly the consumption of gold, and lower the cost of raw material. The preparation method is simple in operation, and the storage of plating solution is stable. The prepared gold electrode has the advantages of high purity, smooth and bright surface, compactness and uniformity, has no pin-hole cracks or other defects, and is firmly combined.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a gold electrode of a light-emitting diode. Background technique [0002] Light-emitting diode (LED) is a light-emitting device that converts electrical energy into light energy. It is widely used in many fields such as indication, display, decoration, lighting, etc., and has become an indispensable part of our life. [0003] The main material of existing light-emitting diode electrodes is gold, which is generally produced by vacuum evaporation or sputtering. However, these preparation methods cannot accurately control the deposition position of gold, so that most of the gold is deposited in the non-electrode area, resulting in low utilization rate of gold, wasting a lot of expensive raw materials, thereby increasing the production cost of light-emitting diodes. [0004] Electroless gold plating can be divided into two types: chemical replacement me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/36
Inventor 陈国聪王孟源黄少华雷秀铮
Owner ZHEJIANG INVENLUX TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com