Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Current generating circuit

A technology for generating circuits and currents, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of limiting the maximum gain, deterioration of the good linear adjustment rate, etc., to improve the linear adjustment rate, reduce the impact ionization effect, The effect of reducing the drain-source voltage

Active Publication Date: 2009-02-04
FREMONT MICRO DEVICES SHENZHEN LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at higher supply Vcc voltages, the impact ionization effect limits the maximum gain achievable with the cascode structure because it introduces a small signal from drain to substrate instead of drain to source resistance
The effect of impact ionization degrades the good linear regulation rate at low voltage operation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Current generating circuit
  • Current generating circuit
  • Current generating circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] figure 2 Shown is the traditional cascode structure used to improve the poor linearity adjustment rate caused by the insufficient output resistance of the current mirror. This structure can show satisfactory performance when most of the Vcc is not too high. However, with the increase of Vcc, the impact ionization effect on the N-type MOS transistor 100 which bears most of the voltage stress gradually becomes serious. The high gain of the cascode structure is limited, thereby deteriorating the linear regulation of the PTAT current. from Figure 4 In the NodeB waveform we know that, Figure 4 The voltage waveform at the NodeB point in the middle is equivalent to figure 2 The voltage waveform of the NodeC point in the middle, when Vcc=6V, is added to figure 2 The voltage difference Vcc-|Vthp| (Vthp is the threshold voltage of pMOSFET) between the two ends of the drain source of 100 in the circuit is greater than 5V.

[0017] image 3 Shown is an embodiment of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a current generated circuit which can integrate an over-voltage reducing device; the current is in direct proportion with the temperature (PTAT); the current generated circuit comprises a first cascode current mirror circuit and a second cascode current mirror circuit which are connected between a power supply Vcc and the ground in series; and the current generated circuit also comprises an over- voltage reducing device for restraining the impact ionization effect. The application of the current generated circuit can effectively reduce the drain-source voltage on the cascode device so as to reduce the influence of the impact ionization effect, without affecting the minimum operating voltage; therefore, the current generated circuit keeps the maximum gain of the current mirror structure and fundamentally solves the influence of impact ionization on the cascode, thereby improving the current benchmark linear adjusting rate.

Description

technical field [0001] The present invention relates to current reference design technology, more specifically, relates to a proportional to temperature (PTAT) current generation circuit that improves the linear adjustment rate of the current reference. Background technique [0002] Voltage references are widely used in analog circuits, such as in LDO, ADC / DAC and so on. It can accurately output a voltage that is almost independent of the input voltage and temperature, and the relationship between the voltage reference and the input voltage is measured by the linear adjustment rate. A voltage reference with high linearity regulation is essential for devices with a wide input voltage range. Commonly used voltage references are based on voltage mode and current mode. The voltage mode uses two voltages with opposite stability coefficients, and adds a certain weighting factor to obtain a voltage that is almost independent of temperature. The current mode uses two currents wit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/16
Inventor 谭润钦谷文浩许如柏
Owner FREMONT MICRO DEVICES SHENZHEN LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products