a reference source

Abstract

The invention discloses a reference source. The reference source includes a first current generating circuit, a second current generating circuit and a current subtraction circuit, the first input end of the first current generating circuit is electrically connected to the first power line, and the second input end is electrically connected to the second power line , the first input end of the second current generation circuit is electrically connected to the first power line, the second input end is electrically connected to the second power line, the first input end of the current subtraction circuit is electrically connected to the first power line, and the second The input end is electrically connected to the second power line, the first control end is electrically connected to the output end of the first current generating circuit, and the second control end is electrically connected to the output end of the second current generating circuit. The invention eliminates the influence of the voltage variation of the first power line and the second power line on the current of the current source, and improves the linear adjustment rate of the reference source.

Description

technical field [0001] The embodiments of the present invention relate to the field of electronic technology, and in particular, to a reference source. Background technique [0002] With the development and popularization of portable devices and wireless sensor networks, voltage source circuits with low power consumption and low voltage have received extensive attention. Among them, the reference source circuit is a key part of analog circuits and mixed signal applications, and the research on its low power consumption and low voltage has also been greatly developed. [0003] The traditional voltage source circuit is realized by BJT (Bipolar Junction Transistor). Since BJT has good I-V characteristics, it is insensitive to changes in PVT (Process, Voltage, Temperature; process, voltage, temperature). However, BJTs have a higher threshold (around 700mV), which means a higher supply voltage is required. With the reduction of process nodes, sub-threshold metal oxide semicondu...

AI Technical Summary

Problems solved by technology

However, compared with the use of BJT tubes, the existing reference sources use MOS tubes working in the sub-threshold region, the threshold voltage of which varies significantly with PVT, and has the problem of low linear adjustment rate

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